2
an appreciable relaxation time T1of 15 µs and coherence
time T2of 220 ns 23.
Here we successfully extend both T1and T2into 0.1 ms
time scale by making three critical advancements: (i)
annealing solid Ne to pursue the best surface quality, (ii)
stabilizing the electron trapping potential to ensure the
lowest (<10 Hz) background noise, and (iii) operating
the qubit at charge-noise-insensitive (sweet) spots. With
0.1 ms long coherence time, we manage to perform
single-shot readout of the qubit states 27 and obtain
a 98.1 % readout fidelity without using a quantum-
limited amplifier. This is on par with the readout
fidelity of the state-of-the-art transmon qubits with a
similar amplification chain 27,28. We further manage
to perform Clifford-based randomized benchmarking 29
and obtain an average single-qubit gate fidelity of
99.97 %, which is well above the fault-tolerance threshold
for quantum error correction with surface codes 30.
Moreover, we manage to simultaneously couple two
electron qubits with the same resonator, as a first step
toward two-qubit entangling gates for universal quantum
computing 31. These results manifest that the eNe
charge qubits outperform all traditional semiconductor
and superconducting charge qubits and rival the best
superconducting transmon qubits today.
Qubit design
The eNe qubit is situated in an electron trap in
a niobium (Nb) superconducting quantum circuit that
is fabricated on an intrinsic silicon (Si) substrate, as
shown in Fig. 1a. A channel of 3.5 µm in width and
1µm in depth is etched into the substrate. A quarter-
wavelength double-stripline microwave resonator runs on
the bottom through the channel. A dc electrode, called
the trap, also runs on the bottom, but from the other
end of the channel into the open end of the resonator.
The channel, resonator, and trap are all deformed into
oval shapes in the trapping region to accommodate the
desired functionalities as described below. On the ground
plane outside the channel, four additional dc electrodes,
made into two pairs and called the resonator-guards and
trap-guards respectively, surround the trapping region.
The dc bias voltages applied to these dc electrodes, as
well as the resonator with a tuning-fork structure 32,
tune the trapping potential. We ensures the lowest
charge noise from our apparatus by using an ultra-
stable high-precision digital-to-analog converter (DAC)
at room temperature and lowpass filters with 10 Hz cutoff
frequency at mK temperature.
The qubit states |0iand |1iare defined by the
electron’s motional (charge) states, i.e., the ground
state |giand the first excited state |eirespectively, in
the y-direction across the channel. The electric dipole
transition between |giand |eistrongly couples with the
electric field, which points from one stripline to the
other, of the microwave photons in the antisymmetric
(differential) mode of the resonator 23,32. The bare
resonator frequency, defined after neon filling but before
electron-photon coupling, is ωr/2π=fr= 6.4262 GHz.
The resonator linewidth is κ/2π= 0.46 MHz, which is
dominated by the input and output photon coupling. All
the microwave measurements are done in a transmission
configuration through the resonator.
We fill a controlled amount of liquid Ne into the sample
cell, using a homemade gas-handling puff system, to wet
the channel and quantum circuit at around 26 K. We cool
the system down along the liquid-vapor coexistence line
and turn the liquid into solid by passing the solid-liquid-
gas triple point at the temperature Tt= 24.6 K and
pressure Pt= 0.43 bar 33. We hold the temperature at
10 K for 1 – 2 hours to anneal the solid and smooth out
the surface 34, and then continuously cool down to the
base temperature around 10 mK for experiments. The
thickness of solid Ne that covers the trapping region
is estimated to be tens of nanometers. Electrons are
emitted from a heated tungsten filament above the
quantum circuit and are trapped on the solid Ne surface
under the combined actions of natural surface potential
and applied electric potential 23,24,35,36.
Qubit spectroscopy
We first verify the strong coupling between a trapped
single electron and microwave photons in the circuit
quantum electrodynamics (cQED) architecture (see
Methods). By varying the resonator-guard voltage Vrg
and keeping all other voltages fixed, we tune the qubit
frequency fqacross fr. The normalized transmission
amplitude (A/A0)2through the resonator is plotted in
Fig. 1b. Two avoided crossings, known as the vacuum
Rabi splitting, can be clearly seen. A line cut in Fig. 1b at
the on-resonance condition fq=fr, marked by the pink
arrows, is plotted in Fig. 1c. By fitting the curve with
the input-output theory, we obtain the electron-photon
(qubit-resonator) coupling strength g/2π= 2.3 MHz,
and the on-resonance qubit linewidth γ/2π= 0.36 MHz.
The fact that g > κ > γ indicates that the qubit
and resonator are strongly coupled. In this vacuum
Rabi splitting measurement, the average intra-resonator
photon number ¯nis kept below 1, as can be verified by
the ac Stark effect 37 (see Methods).
We use two-tone qubit spectroscopy to reveal the qubit
spectrum tuned by Vrg , as plotted in Fig. 1d. The
dependence of fqon Vrg can be identified as the white
curve, where the drive frequency fdhits fqand induces
a sudden phase shift. The spectrum suggests that fq
is nearly a quadratic function of Vrg and contains a
minimum at the so-called charge sweet spot, as indicated
by the yellow arrow. On this spot, where fq=fss =
6.3915 GHz and Vrg =Vss =−270 mV, the charge
qubit is first-order insensitive to the low-frequency charge
noise and holds the longest coherence time along the
spectrum 38.
State control and readout
We perform real-time state control and readout on the
eNe qubit in the dispersive regime. Rabi oscillations 39
are observed by driving the qubit on the sweet spot, using
Gaussian-shaped microwave pulses with fixed frequency
fqand amplitude Apulse, and variable pulse duration