1 Wafer -scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse

2025-04-28 0 0 908.82KB 17 页 10玖币

侵权投诉

Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of

III-V materials and substrate reuse

Nicolas Paupy1,2, Zakaria Oulad Elhmaidi1,2, Alexandre Chapotot1,2, Tadeáš Hanuš1,2, Javier

Arias-Zapata1,2, Bouraoui Ilahi1,2, Alexandre Heintz1,2, Alex Brice Poungoué Mbeunmi1,2,

Roxana Arvinte1,2, Mohammad Reza Aziziyan1,2, Valentin Daniel1,2, Gwenaëlle Hamon1,2,

Jérémie Chrétien1,2, Firas Zouaghi1,2, Ahmed Ayari1,2, Laurie Mouchel1,2, Jonathan

Henriques1,2, Loïc Demoulin1,2, Thierno Mamoudou Diallo1,2, Philippe-Olivier Provost1,2,

Hubert Pelletier1,2, Maïté Volatier1,2, Rufi Kurstjens3, Jinyoun Cho3, Guillaume Courtois3,

Kristof Dessein3, Sébastien Arcand4, Christian Dubuc4, Abdelatif Jaouad1,2, Nicolas

Quaegebeur5, Ryan Gosselin6, Denis Machon2,7, Richard Arès1,2, Maxime Darnon1,2 &

Abderraouf Boucherif1,2*

1- Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000

Boulevard de l’Université, Sherbrooke, J1K 0A5, QC, Canada

2- Laboratoire Nanotechnologies Nanosystèmes (LN2) - CNRS IRL-3463, Université de Sherbrooke,

3000 Boulevard Université, Sherbrooke, Québec J1K OA5, Canada

3- Umicore Electro-Optic Materials, Watertorenstraat 33, 2250, Olen, Belgium

4- Saint-Augustin Canada Electric Inc.

75 rue d’Anvers, Saint-Augustin, G3A 1S5, QC, Canada

5- Department of Mechanical Engineering, Université de Sherbrooke, 2500 Boulevard de l’Université,

Sherbrooke, J1K 2R1 QC, Canada

6- Department of Chemical and Biotechnological Engineering, Université de Sherbrooke, 2500

Boulevard de l’Université, Sherbrooke, J1K OA5, QC, Canada

7- Institut Lumière Matière, UMR5306 Université Lyon 1-CNRS, Université de Lyon F-69622

Villeurbanne cedex, France

*Corresponding author. Email: abderraouf.boucherif@usherbrooke.ca

Keywords: Germanium nanomembrane, mesoporous Ge, template for III-V epitaxy, Substrate

reuse, layer lift-off, X-ray diffraction, Transmission electron microscopy of semiconductors.

Germanium (Ge) is increasingly used as a substrate for high-performance

optoelectronic, photovoltaic, and electronic devices. These devices are usually grown on thick

and rigid Ge substrates manufactured by classical wafering techniques. Nanomembranes (NMs)

provide an alternative to this approach while offering wafer-scale lateral dimensions, weight

reduction, limitation of waste, and cost effectiveness. Herein, we introduce the Porous

germanium Efficient Epitaxial LayEr Release (PEELER) process, which consists of the

fabrication of wafer-scale detachable monocrystalline Ge NMs on porous Ge (PGe) and

substrate reuse. We demonstrate monocrystalline Ge NMs with surface roughness below 1 nm

on top of nanoengineered void layer enabling layer detachment. Furthermore, these Ge NMs

exhibit compatibility with the growth of III-V materials. High-resolution transmission electron

microscopy (HRTEM) characterization shows Ge NMs crystallinity and high-resolution X-ray

diffraction (HRXRD) reciprocal space mapping endorses high-quality GaAs layers. Finally, we

demonstrate the chemical reconditioning process of the Ge substrate, allowing its reuse, to

produce multiple free-standing NMs from a single parent wafer. The PEELER process

significantly reduces the consumption of Ge during the fabrication process which paves the way

for a new generation of low-cost flexible optoelectronics devices.

1. Introduction

Free-standing semiconductor nanomembranes (NMs) draw tremendous attention in

nanoscience and engineering for their unique mechanical stability and structural properties.[1]

In this regard, they represent a powerful technology for monocrystalline growth, layer release,

and transfer to any target substrate.[2] Besides, this scheme allows significant substrate material

reduction compared to conventional substrates manufactured by classical wafering

techniques[3,4]. This is especially interesting in the case of expensive materials.[5] Furthermore,

thin NMs enable the improvement of semiconductor properties and the manufacture of novel

devices such as memories and sensors,[6] high-performance photodetectors,[7] and photovoltaic

devices.[8]

Ge NMs attract special attention since the intrinsic properties of Ge grants the growth

compatibility with a wide range of III-V alloy materials.[9,10] Moreover, Ge NMs benefit from

flexibility and lightweight for the fabrication of high efficiency and flexible optoelectronic

devices.[11] Additionally, vertical miniaturization of optoelectronic devices was recently shown

using Ge NMs.[12,13] Some challenges are yet to be overcome to achieve widespread commercial

adoption of Ge NMs including (a) a cost-effective and viable fabrication process; (b) wafer-

scale application (c) compatibility with the semiconductor manufacturing procedures.

Ge NMs and substrate reuse offer a solution to reduce the overall consumption of Ge,

which is a critical raw material. Moreover, the use of Ge NMs would greatly reduce the weight

of III-V triple-junction solar cells on Ge substrate, which represents more than 90% [14] of the

total mass of the solar cell. The use of NMs would also allow the reduction of the Ge substrate

thickness (below 60 um[14]), which has been shown to be a key technology for the next

generation of space and some terrestrial applications, like electric cars, drones or wearable

electronic devices.

This strategy further complements the on-going efforts to develop a sustainable process

flow from Ge extraction to device processing.[13] Different techniques for detachable layers and

substrate reuse have been proposed: Epitaxial lift-off of layers (ELO) using a selective chemical

etching of a sacrificial layer to release the “active” epitaxial layer.[15] ELO is the most

widespread technique proposed in the literature. However, at wafer-scale the ELO process

copes with some challenges, such as thin-film handling and alignment for device fabrication.[16]

Another technique that has been the subject of recent research for : controlled spalling[17]. It has

been shown that the substrate can be reused, but this technique generates many defects, which

will strongly impact the performance of the devices.

Recently, another technique called Germanium-on-Nothing (GoN) uses a sequence of

lithography, plasma etching, and annealing steps to create a weak void layer used for the

detachment. However, this approach increases the substrate reuse cost and the complexity of

the process.[18] Other layer detachment and substrate reuse methods were demonstrated such as

laser lift-off,[19] Ge-on-Ge lift-off[20] and double-layer porosification lift-off.[21]

Nonetheless, none of the preceding techniques have successfully demonstrated all the following

points necessary for a wide adoption of the method: (1) fabrication of detachable and mono-

crystalline Ge NMs (2) wafer-scale application (3) cost effective reconditioning of the substrate

after NMs detachment (4) Multiple re-uses of the parent substrate.

In the present work, we introduce the Porous germanium Efficient Epitaxial LayEr

Release (PEELER) process for wafer-scale growth of monocrystalline Ge NMs and their

detachment, compatible with Ge substrates reuse. This approach consists of four key steps: (i)

Wafer-scale porosification by bipolar electrochemical etching (BEE) of a 100 mm, 6° off-cut

Ge wafer (ii) Growth of a monocrystalline Ge on porous Ge (PGe) by molecular beam epitaxy

(MBE) (iii) Ge NMs detachment from the substrate (iv) Substrate reconditioning by chemical

etching to enable reuse of the substrate and cycle repetition.

Furthermore, we provide detailed microstructural investigations of the epitaxial Ge NMs by

High-resolution transmission electron microscopy (HRTEM). The chemical beam epitaxy

(CBE) growth of single-phase GaAs on Ge NMs shows the suitability of this type of substrate

for the growth of III-V heterostructures. Compared to the traditional epitaxy on conventional

Ge wafers, the analysis of the Ge consumption of the PEELER process testifies considerable

reduction of the total Ge material used for the production of high-performance devices.

2. Results and Discussion

Approach

The PEELER approach is illustrated by four steps as shown in the Figure 1. The first

step (i) involves forming a single PGe layer on a 100 mm Ge substrate with 6° misorientation

toward (111). (ii) After chemical cleaning and low temperature annealing (LT), Ge buffer layer

has been first deposited at LT followed by high-temperature (HT) annealing step to reorganize

the porous layer into weak voided layer below the Ge buffer. Then, a high-quality Ge layer is

grown on top to form the Ge NM at higher temperatures. (iii) This Ge NM is detached

mechanically from the substrate (iv) Finally, the parent substrate is reconditioned by an

optimized chemical polishing and the process is repeated to produce more NMs.

Figure 1. Schematic illustration of Ge NMs fabrication and substrate reuse process by the

PEELER approach.

Epitaxial Growth of Ge NMs on PGe

The PEELER cycle starts with the formation of a uniform PGe layer by bipolar

electrochemical etching (BEE). The cross-sectional SEM view (Figure 2a) shows a well-

defined interface between the PGe layer with sponge-like morphology and the bulk Ge material.

Non-destructive ellipsometry mapping with 49 measurement points was used to determine the

PGe layer characteristics and to evaluate its uniformity over the entire 100 mm wafer (Figure 2b

文档加载中……请稍候！
如果长时间未打开，您也可以点击刷新试试。

下载文档到电脑，查找使用更方便

10 玖币 0人已下载

立即下载

摘要：

1Wafer-scaledetachablemonocrystallineGermaniumnanomembranesforthegrowthofIII-VmaterialsandsubstratereuseNicolasPaupy1,2,ZakariaOuladElhmaidi1,2,AlexandreChapotot1,2,TadeášHanuš1,2,JavierArias-Zapata1,2,BouraouiIlahi1,2,AlexandreHeintz1,2,AlexBricePoungouéMbeunmi1,2,RoxanaArvinte1,2,MohammadRezaAzizi...

展开>> 收起<<

1 Wafer -scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse.pdf

共17页,预览4页

还剩页未读，继续阅读

声明：本站为文档C2C交易模式，即用户上传的文档直接被用户下载，本站只是中间服务平台，本站所有文档下载所得的收益归上传人(含作者)所有。玖贝云文库仅提供信息存储空间，仅对用户上传内容的表现方式做保护处理，对上载内容本身不做任何修改或编辑。若文档所含内容侵犯了您的版权或隐私，请立即通知玖贝云文库，我们立即给予删除！

1 Wafer -scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse

相关推荐

开通VIP享超值会员特权

作者详情

相关内容

热门标签

举报选择: