Deep learning extraction of band structure parameters from density of states a case study on trilayer graphene Paul Henderson1Areg Ghazaryan2Alexander A. Zibrov3 4Andrea F. Young4and Maksym Serbyn2

2025-04-26 0 0 2.15MB 12 页 10玖币
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Deep learning extraction of band structure parameters from density of states: a case
study on trilayer graphene
Paul Henderson,1Areg Ghazaryan,2Alexander A. Zibrov,3, 4 Andrea F. Young,4and Maksym Serbyn2
1School of Computing Science, University of Glasgow, Scotland
2Institute of Science and Technology Austria (ISTA), Am Campus 1, 3400 Klosterneuburg, Austria
3Department of Physics, Harvard University, Cambridge, MA, USA
4Department of Physics, University of California, Santa Barbara, CA, USA
(Dated: September 19, 2023)
The development of two-dimensional materials has resulted in a diverse range of novel, high-quality
compounds with increasing complexity. A key requirement for a comprehensive quantitative theory
is the accurate determination of these materials’ band structure parameters. However, this task is
challenging due to the intricate band structures and the indirect nature of experimental probes. In
this work, we introduce a general framework to derive band structure parameters from experimental
data using deep neural networks. We applied our method to the penetration field capacitance
measurement of trilayer graphene, an effective probe of its density of states. First, we demonstrate
that a trained deep network gives accurate predictions for the penetration field capacitance as a
function of tight-binding parameters. Next, we use the fast and accurate predictions from the
trained network to automatically determine tight-binding parameters directly from experimental
data, with extracted parameters being in a good agreement with values in the literature. We
conclude by discussing potential applications of our method to other materials and experimental
techniques beyond penetration field capacitance.
I. INTRODUCTION
Electronic band structure of crystalline solids repre-
sents a simple yet very rich example of emergence. Under
the influence of scattering from the lattice potential, the
electron may acquire a different value of effective mass,
became massless, and acquire additional quantum num-
bers such as pseudospin. In addition, electronic band
structure determines basic properties of materials, pro-
vided interactions are weak enough [1]. Therefore, identi-
fying material parameters that determine the band struc-
ture is of crucial importance. From a theoretical point
of view ab initio methods such as density functional the-
ory have achieved enormous success in this direction [2].
Nevertheless one typically relies on experimental data to
quantitatively extract band structure properties. Exper-
imentally there exist numerous ways to access the elec-
tronic structure, such as angle resolved photoemission
[3] and X-ray absorption spectroscopy [4], de Haas-van
Alphen effect based on magnetic oscillations [5], analyz-
ing reflection and absorption spectra [6], and electronic
transport measurement [7], to name just a few. Despite
such a wealth of measurement techniques, matching ex-
perimental results with theoretical predictions remains a
challenging problem due to the complexity of the band
structure, which translates into a large number of in-
volved parameters.
The recent surge of two-dimensional (2D) materials [8]
brings new aspects to the problem of determining band
structure. First, often the complexity and the number
of parameters in 2D materials is considerably lower com-
pared to their three-dimensional counterparts. Besides,
2D materials feature additional level control such as mod-
ifying charge density by gating, and may have an ex-
tremely high crystal quality. This opens access to high
resolution experimental data, which may potentially be
used for precise determination of band structure param-
eters. A particular example of such data is provided by
so-called penetration field capacitance measurements [9],
that effectively probe the density of states (DOS) of the
material as a function of carrier density and transverse
electric field. Such experimental data has been used to
determine material parameters such as hopping matrix
elements in several 2D systems [10, 11].
Typically, extraction of band structure parameters
based on experimental data relies on an efficient solution
to what we term the forward problem. In the specific
example of penetration field capacitance measurements
sensitive to the DOS, this means simulating the DOS for
specific values of material parameters such as hopping
matrix elements entering tight-binding model of the band
structure. However, the existence of an efficient solution
for this forward problem does not guarantee a fast solu-
tion to the inverse problem—identification of the physi-
cal parameters corresponding to a set of empirical data.
The inverse problem is challenging because (i) solving
for the best-fitting parameters is a high-dimensional op-
timization problem that requires numerous simulations
of the forward problem at each step that can quickly
become very costly numerically; and (ii) experimental
measurements are typically affected by additional factors
not easily accounted for in simulation (e.g. geometric and
parasitic capacitance, disorder), meaning that an exact
match between the data simulated in the forward prob-
lem and that obtained from experiments is not possible.
The typical approach is therefore manual comparison of
an experimental dataset with a large number of simulated
ones, relying on physical intuition of which features are
important. This process is laborious and computation-
ally expensive [12], calling for the development of more
arXiv:2210.06310v2 [cond-mat.mes-hall] 18 Sep 2023
2
efficient and systematic approaches.
In this work we present a machine learning based
method that automates the process of comparing numer-
ical simulation and experimental data, so the physical
parameters of the band structure that gave rise to a par-
ticular experimental dataset can be determined with min-
imal human effort. Recently machine learning and arti-
ficial neural network techniques have seen various appli-
cations in the realm of physical sciences [13]. In con-
densed matter physics, artificial neural networks have
been used to represent quantum states [14, 15] and learn
these states from available data [16, 17]. In a different
direction, recently machine learning models were use for
photonic crystals band diagram prediction and gap opti-
misation [18–20]. Despite a large number of more the-
oretical applications, machine learning approaches are
only starting to be employed in analysis of experimental
data. Recent examples include identification of quantum
phase transitions [21] and hidden orders from experimen-
tal images [22]. These few examples highlight the strong
potential of machine learning based approaches on ex-
perimental data, that we further exploit in the present
work.
A conceptual overview of our approach is shown in
Fig. 1. To extract the band structure parameters from
experimental data, we first train a deep neural net-
work (DNN) [23, 24] that solves the forward problem by
replicating the numerical calculation of the DOS (Sec-
tion II A). To this end we use the simulation of the ex-
perimental data shown in Fig. 1(a). In the particular
example of penetration field capacitance data considered
here, the simulator uses the band structure parameters,
the asymmetry potential between two edges of the system
(physically equivalent to transverse electric field) and the
chemical potential as input parameters. As an output we
get charge density and from that determine the DOS by
differentiating density with respect to chemical poten-
tial. A set of simulated data is used to train the DNN in
Fig. 1(b). Constructed in a way to efficiently replace the
data simulator, the DNN acts as a function that takes the
band structure parameters, the asymmetry potential and
directly charge density as input, and outputs the corre-
sponding DOS. It is constructed by learning from a large
dataset of simulation results, optimising its output to al-
ways match that of the simulator. The resulting DNN
represents a fast and differentiable replacement for the
physical simulation. It can therefore be used to efficiently
solve the inverse problem (Section II B). In particular, the
values of parameters that gave rise to a given dataset are
extracted using gradient-based optimisation in Fig. 1(c),
where we iteratively modify the band structure parame-
ters until the DNN’s output matches the provided DOS
values.
The task of mapping a vector of inputs (e.g. band
structure parameters) to a continuous output (e.g. DOS)
is known as regression in machine learning [24]. A DNN
implements such a mapping as a series of chained ma-
trix multiplications (‘layers’) interleaved with element-
wise non-linear functions (‘activations’). Each layer mul-
tiplies the vector of outputs from the previous by some
weight matrix, to give an updated vector [23]; the final
layer typical yields a single value. The weight matri-
ces are optimized (‘trained’) using first-order optimiza-
tion (e.g. gradient descent), such that the overall map-
ping from inputs to output approximates some func-
tion defined by a training dataset of inputs and desired
outputs. The celebrated universal approximation the-
orem [25] proves that a neural network with just two
layers (but unbounded width) can represent any smooth
function. More recently, it has been shown that this is
also true for a neural network of bounded width (but un-
bounded depth) [26]. In practice, even finite-sized DNNs
have proven very successful in approximating complex
functions in many domains of science. One of our contri-
butions is to show a DNN can also provide an accurate
estimate of DOS given band-structure parameters, field
strength, and chemical potential.
Since our final goal is to determine the band-structure
parameters from experimental measurements of penetra-
tion capacitance, it might seem natural to train the DNN
for exactly this task (the inverse problem), instead of
the forward problem. However, this is not possible in
practice. We have only a single experimental dataset,
for which the parameters are unknown, whereas machine
learning techniques require a large dataset of training ex-
amples (with the true output known) to learn the desired
mapping from. If instead we trained on easy-to-obtain
simulated data, the resulting model would not work on
experimental data since the latter is significantly different
from the former both in terms of the relative magnitude
of features in the data, and the locations of features such
as edges. These differences may arise since the simula-
tor uses a simplified effective model of the material and
does not account for screening at the microscopic level,
disorder, strain, experimental uncertainties, and possibly
other ingredients. In contrast, statistical learning theory
requires that the training and test data be drawn from
the same distributions if a trained model is to work on
the latter [27].
As a specific application, we demonstrate the frame-
work outlined above on Bernal stacked (ABA) tri-
layer graphene. For this material both band structure
parametrization [28, 29] and high quality experimental
measurements are readily available [11], calling for an
accurate extraction of the band structure parameters.
The determination of the band structure was performed
by tour de force manual fitting in an earlier work [11],
thus allowing us to benchmark our approach. First, we
train the DNN and show it gives an efficient and accu-
rate surrogate for numerical calculation of the DOS for
this system, for a wide range of band structure param-
eters (Section III C). Next, we use the DNN for auto-
matically solving the inverse problem of determining the
physical parameters giving rise to certain values of the
penetration capacitance (Section III D). Finally, we ap-
ply this to experimental data from Ref. [11] by exploit-
3
neural
network
measure
difference
iteratively
update γ
(c) inverse problem(b) forward problem
predicted
training
data
physical
simulator 
γ
γ
Δ1
n
empirical Cp
transform
predicted
to Cp
(a) data generation
γ ,
γ ,
...
Δ1
n
D
n
FIG. 1. Our approach to the direct extraction of the band structure parameters uses datasets obtained with a physical
simulator shown in panel (a) to train a DNN in panel (b), thus providing a more efficient solution to the forward problem. The
DNN-based simulator is used for a gradient optimization of the band structure parameters, allowing to extract their values
from experimental data in panel (c).
ing techniques from computer vision, that allow match-
ing important features of the measurements (e.g. Van
Hove singularity peaks and jumps of DOS), while ignor-
ing features that differ between experimental and simu-
lated data (e.g. measurement noise and discreteness of
calculation grid) (Section III E). The resulting values of
parameters agree within error bars with the estimates
from the literature, thus providing a particular bench-
mark for our approach.
The paper is organized as follows: Section II describes
the general structure of the DNN for the forward problem
and our minimization approach for inverse problem. Sec-
tion III applies the framework constructed in Section II to
ABA graphene simulation results for the forward and in-
verse problems, eventually utilizing it for extracting band
parameters from experimental results. Finally Section IV
is devoted to discussion of the main results and general-
ization of the model to other systems.
II. METHOD
We assume access to a simulator S(see Fig. 1) that
in the particular example of the penetration field capaci-
tance calculates the charge density nand density of states
ν=n
µ given band structure parameters γ, interlayer
asymmetry ∆1, and chemical potential µ. We assume
γΓ, where Γ defines a physically-plausible range for
those parameters, and similarly that (∆1, n)P. The
approach presented here is general, while the specific
physical meaning of these parameters will be discussed
in Section III. Typically the simulator will be slow to
evaluate, making it difficult to use ‘in the loop’ for solv-
ing the inverse problem, of finding the physical parame-
ters γcorresponding to observed data. We shall instead
use Sto generate training data represented by tuples
(γ,1, n, ν) for a machine learning regression model—a
deep neural network—Fω, that will be trained to approx-
imate Sin Section II A. We shall then use the result-
ing DNN Fωwhen solving the inverse problem in Sec-
tion II B.
A. Forward problem
We introduce a function Fωthat maps γ, ∆1and n
to the DOS. We choose Fωto be a deep neural network
(DNN) [23], with weights ω; these weights are free pa-
rameters that determine the function it represents. Our
goal is that Fωmatches Sas closely as possible for all
relevant values of γ, ∆1and µ, i.e. if the simulator re-
turns nand νfor given (γ,1, µ) and if (∆1, n)P
are within the domain of physically realistic parameters,
then DNN approximates well the DOS, Fω(γ,1, n)ν.
The network weights ωwould ideally be set to minimise
the absolute difference between the network’s predicted
values and those νfrom the simulator, over the entire
parameter space Γ ×P:
ω= argmin ωZ(∆1, n)P,γΓFω(γ,1, n)νdγd∆1dn
In practice we instead minimise the mean error over a
finite training set [24] of points T Γ×Pat which we
have precomputed nand νusing the simulator S, i.e.
ω= argmin ω1
|T | X
(γ,1, n, ν)∈T Fω(γ,1, n)ν.(1)
To solve this optimisation problem, the weights ωare
initialised using the heuristic of Ref. [30], then itera-
tively updated using the first-order stochastic-gradient
optimiser Adam [31] with a minibatch size of 512 and
learning rate (step size) of 103. We use a DNN with
five fully-connected layers of 512 units each, with ELU
nonlinearities [32], layer normalisation [33], and residual
connections [34]. For the input layer, we use Fourier fea-
ture embedding with four octaves [35]; for the output
layer, we use a single linear unit, see Appendix A for
details. We select these architectural parameters, and
摘要:

Deeplearningextractionofbandstructureparametersfromdensityofstates:acasestudyontrilayergraphenePaulHenderson,1AregGhazaryan,2AlexanderA.Zibrov,3,4AndreaF.Young,4andMaksymSerbyn21SchoolofComputingScience,UniversityofGlasgow,Scotland2InstituteofScienceandTechnologyAustria(ISTA),AmCampus1,3400Klosterne...

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