2
of the magnetizations of the layers. Using Brillioun
light scattering, we examine the dispersion of thermal
MSWs in the bilayer structure and reveal the forma-
tion of collective acoustic (in-phase) and optical (out-
of-phase) modes. Both modes demonstrate considerable
nonreciprocity reaching several percent at a wavenum-
ber of 22·104rad cm−1. Using a theoretical model which
takes into account dipolar, exchange, and anisotropy con-
tributions to spin wave dispersion, we show that, along
with the difference in layers’ magnetic parameters, the
leading contribution to the nonreciprocity comes from
the difference in the spin wave frequencies of the layers
due to their different thicknesses. The thickness effect
is pronounced in films with a thickness of the order of
10 nm and can be additionally enhanced due to interfa-
cial spin pinning. We further suggest the conditions for
maximizing the nonreciprocity, which gives an optimal
geometrical asymmetry defined by the relation between
the layer thicknesses and the pinning conditions at the
interfaces. Such artificially induced nonreciprocity gives
the opportunity to design magnonic logic gates based on
their geometrical parameters rather than on the proper-
ties of the materials.
SAMPLE AND METHODS
To study the possibility of noreciprocal MSWs propa-
gation in a magnetic multilayered structure with asym-
metry in the geometrical characteristics of the magnetic
constituents, we have chosen a bilayer structure con-
sisting of two dipolarly coupled layers of the ferromag-
netic alloy galfenol separated by a copper layer, specifi-
cally Fe81Ga19(7 nm)/Cu(5 nm)/Fe81Ga19(4 nm), grown
by sputter deposition on a (100)-GaAs substrate. In
the following, the 7-nm galfenol layer is referred to as
the top layer, and the 4-nm layer adjacent to the sub-
strate – as the bottom layer (inset in Fig. 1 a). The top
layer is protected by Al (3 nm) and SiO2(120 nm) cap-
ping layers. The preparation and characterization of the
structure are described in details elsewhere [33]. Further-
more, a single 20 nm film of galfenol on a (100)-GaAs
substrate was deposited with the same capped layers as
in the case of bilayer structure [34]. The single film has
a thickness comparable to the total thickness of the lay-
ered structure, and thus it is used as a reference to de-
termine the MSW dispersion in the case of a single film.
We choose galfenol-based structures because they exhibit
low Gilbert damping [35], high values of magnetization
precession lifetime [36, 37] and long MSW propagation
length [38], which makes galfenol a prospective material
for magnonic applications. According to ferromagnetic
resonance measurements, the saturation magnetization
of the ferromagnetic layers is estimated as µ0MS= 1.7 T
at layer thicknesses of 7 and 20 nm [37, 38]. The satura-
tion magnetization of the 4 nm layer is slightly reduced
due to the interface with the GaAs substrate [39] and is
µ0MS= 1.6 T. All galfenol layers demonstrate effective
cubic magnetocrystalline anisotropy with the parameter
KC= 2.7·104J m−3and an additional uniaxial growth-
induced anisotropy in the film’s plane [40]. The parame-
ters of the uniaxial anisotropy are KU t =−0.3·104J m−3
for the top layer and KU b =−1.1·104J m−3for the bot-
tom layer in the bilayer structure. KU=−1·104J/m3
for the 20-nm single film [38].
The dispersion of thermal MSWs was studied by
the Brillouin light scattering (BLS) technique in the
backscattering geometry [41–43] (inset in Fig. 1 a). A sin-
gle mode laser with a wavelength of 532 nm is focused on
the sample surface into a spot with a diameter of 50 µm
using an objective lens. Frequency resolution is achieved
using a six-pass Fabry-Perot interferometer. The resolu-
tion in the wave vectors is achieved by tilting the optical
axis of the detection beam from the normal to the film’s
plane in the range of angles θ= 0−70 ◦. The correspond-
ing range of wavenumbers is ky= 0 −22 ·104rad cm−1.
All experiments are carried out at room temperature in
an external magnetic field of µ0Hext = 100 mT applied
in the sample plane and perpendicularly to the regis-
tered wavevector. The orientation of Hext is chosen ei-
ther along the easy (EA) or hard (HA) magnetization
axes in the film’s plane (see details in Sec. II Suppl. Ma-
terials [44]).
RESULTS AND DISCUSSION
Figure 1 a presents a typical BLS spectrum
of the bilayer structure obtained at θ= 35 ◦,
ky= 13.5·104rad cm−1. Two peaks are visi-
ble in the Stokes and anti-Stokes parts of the spectrum
with central frequencies fof 11 and 18 GHz. The
experimental dependencies of fon the wavenumber ky
are obtained by approximating the peaks in the BLS
spectra using Lorentz functions (shown by symbols in
Fig. 1 b and c). fof the high frequency peak increases
with wavenumber, while the lower one demonstrates
only a weak dependence of its position on ky. This
behavior is observed for both directions of Hext, parallel
to HA and EA. To reveal the origin of the two peaks in
the BLS spectra, we compare the dispersions obtained
with those in the 20-nm single galfenol film shown in
Fig. 1 d. For the single film, the BLS spectra also contain
two peaks. The frequency of one peak increases with ky,
and thus can be readily assigned to the magnetostatic
surface spin wave (MSSW). The frequency of the second
peak is weakly dependent on the wavenumber, and
corresponds to the spin wave resonance (SWR). In
the studied range of ky, the frequencies of the SWR
are higher than those of the MSSW, according to the
typical properties of these waves in single magnetic
layers [45]. In striking contrast, in the bilayer structure,
the high frequency peak shows the stronger dependence
on ky. Furthermore, at ky= 0, the frequencies of both
dispersion branches coincide, while they differ in the
single layer. Therefore, the two dispersion branches in