2
ing to build artificial vdWHs with desired functionalities
by picking and stacking atomic layers of arbitrary com-
positions. The vdWHs not only preserve the excellent
properties of the original single layers due to the weak
vdW interaction, but also bear additional features. The
construction of vdWHs is an effective method to further
improve the photocatalytic performance as discussed in
several reviews.13,14,16,18,30 Especially, in type-II hetero-
junctions, the lowest energy states of holes and electrons
are on different sides of the heterojunctions, which en-
sures the effective separation of photogenerated electrons
and holes, thereby suppressing the recombination of pho-
togenerated electrons and holes.31,32
Up to now, the electronic and optical properties and
photocatalytic applications of many vdWHs have been
predicted through first-principles calculations, provid-
ing strong support for experimental synthesis and com-
mercial applications.31,33 In our previous study, we per-
formed high-throughput first-principles calculations to
build a 2D semiconductor database (2DSdb) which in-
cluding more than 260 2D semiconductors.34 In spite of
the rapid development of high-throughput computational
2D crystals databases publicly also available at present,
such as MC2D,35 C2DB36, 2DMatPedia37 and JARVIS-
DFT38, systematic high-throughput predictions of band
alignment in vdWHs are still rather incomplete and in-
vestigations of 2D vdWHs applied in photocatalysis are
strongly called for.
In this work, combining the high-throughput first-
principles calculations with a semiempirical vdW dis-
persion correction, the periodic table of heterostructure
types including around 34000 possible vdWHs is obtained
based on Anderson’s rule. Furthermore, dozens of poten-
tial semiconductors and thousands of vdWHs for PWS
applications have been further screened based on the
rules of thumb for PWS. The remainder of this paper is
organized as follows. In Sec. II, methodology and com-
putational details are described. The details of screen-
ing criteria are discussed in Sec. III. Sec. IV presents
high-throughput computational screening of 2d semicon-
ductors and heterostructures potential for photocatalytic
water splitting. Finally, a short summary is given in Sec.
V.
II. METHODOLOGY
A. Density Functional Calculations
Our total energy calculations were performed using
the Vienna Ab initio Simulation Package (VASP).39,40
The electron-ion interaction was described using pro-
jector augmented wave (PAW) method41,42 and the ex-
change and correlation (XC) were treated with GGA
in the Perdew Burke Ernzerhof (PBE) form43. Part of
electronic structure calculations were also performed us-
ing the standard screening parameter of Heyd-Scuseria-
Ernzerhof (HSE06) hybrid functional,44–49 upon the
PBE-calculated equilibrium geometries. A cutoff energy
of 400 eV was adopted for the plane wave basis set, which
yields total energy convergence better than 1 meV/atom.
In addition, the non-bonding vdW interaction is incorpo-
rated by employing a semi-empirical correction scheme
of Grimme’s DFT-D2 method in this study, which has
been successful in describing the geometries of various
layered materials.50,51 In the slab model of 2D systems,
periodic slabs were separated by a vacuum layer of 20
Å in zdirection to avoid mirror interactions. The Bril-
louin zone was sampled by the k-point mesh following the
Monkhorst-Pack scheme,52 with a reciprocal space reso-
lution of 2π×0.03 Å−1. On geometry optimization, both
the shapes and internal structural parameters of pristine
unit-cells were fully relaxed until the residual force on
each atom is less than 0.01 eV/Å. To screen the novel
2D hotocatalysts, we used the VASPKIT package53 as a
high-throughput interface to pre-process the input files
and post-process the data obtained by using VASP code.
III. RESULTS AND DISCUSSIONS
A. 2D van der Waals Heterojunctions
We begin our discussion by determining the band align-
ments of vdWHs when packing any two of the 260 semi-
conductors obtained from our previous study.34 Accord-
ing to the alignments of the CBM and VBM in the con-
stituent layers, vdWHs can be classified into three types:
type I (straddling gap), type II (staggered gap), or type
III (broken gap), as illustrated in Fig. 3(a), respectively.
In type I heterojunctions, both VBM and CBM of two in-
dependent component semiconductors are located at the
same side of the heterointerface. This is beneficial for
spatially confining electrons and holes so that efficient re-
combination can be achievable, rendering them potential
applications in optoelectronic devices such as lightemit-
ting diodes (LEDs).54 In type II heterojunctions, the
CBM and VBM are located in different components with
electrons accumulating in the layer with the lower CBM
and holes accumulating in the other layer with the higher
VBM. Different from type I band alignment, the separa-
tion of electrons and holes on different layers can increase
carrier lifetime, which is desirable for photocatalysis and
unipolar electronic device applications including photo-
voltaics and photodetection applications55–59 In type III
heterojunctions, the VBM of one semiconductor is higher
than the CBM of the other, making the whole system
overall heterojunction metallic. Such a property could
have great potential in tunnel field-effect transistors and
wavelength photodetectors.60,61
The high-throughput design of vdWHs has gained sig-
nificant attention because vdWHs have unique physical
properties and potential applications mentioned above.
Rasmussen et al. theoretically predicted the band align-
ments of 51 semiconducting TMDs and TMOs mono-
layers using GW0 calculations.62 Latterly, äzçelik et