Cavity -mediated thermal control of metal -to-insulator transition in 1T-TaS 2 Giacomo Jarc12 Shahla Yasmin Mathengattil12 Angela Montanaro123 Francesca Giusti12 Enrico

2025-04-27 0 0 5.33MB 52 页 10玖币
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Cavity-mediated thermal control of metal-to-insulator transition
in 1T-TaS2
Giacomo Jarc1,2, Shahla Yasmin Mathengattil1,2, Angela Montanaro1,2,3, Francesca Giusti1,2, Enrico
Maria Rigoni1,2, Rudi Sergo2, Francesca Fassioli3,4, Stephan Winnerl5, Simone Dal Zilio6, Dragan
Mihailovic7, Peter Prelovšek7, Martin Eckstein8, and Daniele Fausti1,2,3.
1Department of Physics, Università degli Studi di Trieste, 34127 Trieste, Italy
2Elettra Sincrotrone Trieste S.C.p.A., 34127 Basovizza Trieste, Italy
3Department of Physics, University of Erlangen-Nürnberg, 91058 Erlangen, Germany
4International School for Advanced Studies (SISSA), Via Bonomea 265, I-34136 Trieste, Italy
5Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf,
Bautzner Landstrasse 400, 01328, Dresden, Germany
6CNR-IOM TASC Laboratory, Trieste 34139, Italy
7Jožef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia
8Institute of Theoretical Physics, University of Hamburg, Notkestrasse 9, 22607 Hamburg, Germany
Correspondence: daniele.fausti@elettra.eu
Placing quantum materials into optical cavities provides a unique platform for controlling
quantum cooperative properties of matter, via both weak and strong light-matter coupling
[1,2]. Here we report the experimental evidence of reversible cavity control of a metal-to-
insulator phase transition in a correlated solid-state material. We embed the charge density
wave material 1T-TaS2 into cryogenic tunable terahertz cavities [3] and show that a switch
between conductive and insulating behaviors, associated with a large change in the sample
temperature, is obtained by mechanically tuning the distance between the cavity mirrors and
their alignment. The large thermal modification observed is indicative of a Purcell-like scenario
in which the spectral profile of the cavity modifies the energy exchange between the material
and the external electromagnetic field. Our findings provide opportunities for controlling the
thermodynamics and macroscopic transport properties of quantum materials by engineering
their electromagnetic environment.
MAIN
Optical driving with ultrashort pulses has been extensively used to dynamically control the properties
of complex quantum materials [4-9]. Yet, several theoretical proposals indicate that the control of
materials functionalities can be obtained by modifying their electromagnetic environment,
embedding the materials into optical cavities, even in absence of a driving field [1,2]. Predictions
range from enhanced superconductivity through cavity-mediated electron pairing [10-15], cavity
control of the competing order between charge density wave and superconducting phases [16], cavity
control of excitons [17], enhanced ferroelectricity [18-20], and cavity control of magnetic orders [21].
Experimentally, it has been demonstrated that vacuum fields in the strong coupling regime [1] can
change material functionalities as, for example, the magneto-transport in two-dimensional materials
[22], the topological protection of the integer quantum Hall effect [23], or the ferromagnetic order in
unconventional superconductors [24].
Cavity control of phase transformations in complex systems can be achieved via distinct physical
mechanisms. On the one hand, the selective coupling of the cavity modes to the excitations of a given
phase can renormalize its free energy with respect to that of other ones, thereby modifying the
temperature at which the phase transition occurs. On the other hand, a cavity can reshape the exchange
of energy between a material and the thermal reservoir of photons in which the material is immersed
[25]. By engineering the density of states of the electromagnetic environment at the sample position
through tunable optical cavities, it is therefore possible to modify the sample’s absorption and
emission [26-29], and, in turn its temperature (Tint). Fig. 1A illustrates the two aforementioned cavity-
mediated mechanisms.
In this work, we investigate the metal-to-insulator phase transition in the transition metal
dichalcogenide 1T-TaS2 embedded in low-energy terahertz (THz) and sub-THz cryogenic cavities
(Fig. 1A). 1T-TaS2 exhibits a temperature-dependent charge order that originates from the
competition of Coulomb repulsion, lattice strain, interlayer hopping, and Fermi surface nesting [30-
32]. At ambient temperature, 1T-TaS2 is in a nearly commensurate charge density wave (NC-CDW)
phase with metallic character, featuring hexagonal-shaped polaron domains [30,33,34] forming a
David’s star pattern [35-37] (Fig. 1C). By lowering the temperature below ~ 180 K, a transition to an
insulating commensurate charge density wave (C-CDW) state occurs [31,38]. We note that the free
energy landscape of 1T-TaS2 is much more complicated than the simple sketch in Fig. 1A: the phase
Fig. 1: Mechanisms of cavity control of quantum material states and THz characterization of 1T-TaS2 metal-to-
insulator transition. A. Schematic of a material embedded in the middle of a tunable optical cavity with controllable
fundamental frequency 𝜔𝑐 and alignment. Coupling of the material’s excitations with the cavity mode can act on the
thermodynamics of the sample within two different scenarios. On the one hand, it can renormalize the free energy of one
material phase with respect to the other (bottom left panel). On the other hand, as a function of 𝜔𝑐 the cavity can reshape
the emission and absorption of the material, subsequently rescaling its local temperature Tint(𝜔𝑐) with respect to the
temperature measured on the sample support (Text). B. THz linear transmission spectra in free space at different
temperatures across 1T-TaS2 metal-to-insulator transition (temperature scans performed by cooling (upper panel) and
heating (lower panel)). To highlight the phase transition, each spectrum has been subtracted from the 280 K THz
transmission. C. Temperature dependence of the integrated low frequency transmission (0.2 THz < < 1.5 THz), marking
the metal-to-insulator transition and its hysteresis. In the insets the time domain THz fields are shown for the metallic and
the insulating phases, together with the illustration of the in-plane lattice modulations characteristic of the insulating C-
CDW phase and of the metallic NC-CDW phase.
transitions in 1T-TaS2 are multiple and sensitive to the thermal history of the sample. Upon heating
from the C-CDW phase, an additional intermediate trigonal (T) phase with in-plane charge stripes
occurs at around 220 K and persists up to around 280 K, when the NC-CDW is re-established [39].
THz spectroscopy is a powerful tool for tracking the metal-to-insulator transition since it is able to
measure contactless the quasi-static dielectric response associated to the presence of conductive
charges characteristic of a metallic state (see Methods and Ref. [3] for further details on the
experimental set-up). Here we employ broadband time-domain THz spectroscopy to track the charge
order in the sample for different cavity settings. We demonstrate that a bidirectional switch between
the metallic and insulating phase can be obtained by tuning the cavity length and by adjusting the
alignment of its mirrors while keeping the cryogenic temperature of the sample support and mirrors
fixed.
It is important to highlight that a simultaneous measurement of the actual sample’s temperature inside
the cavity (Tint) and THz transmission is not viable. At a practical level, the placement of a physical
thermometer within the cavity would absorb the THz pulses and make the transmission measurements
unfeasible. At a fundamental level, any object placed within the optical cavity will perturb the cavity
environment and therefore the response of the light-matter assembly. For this reason, we have
designed an experimental protocol in which for the THz characterization we measure the temperature
on the cold-finger support of the sample outside of the cavity, denoted by Text (Fig. 1A). This protocol
allows us to identify an effective critical temperature Tceff for the phase transition which is defined as
the temperature of the support at which the phase transition is observed. In a separate measurement
campaign, we place a micrometric thermocouple, and we measure for different experimental
configurations the temperature at the sample position (with and without the sample) which we denote
as Tint, while simultaneously monitoring the external temperature Text.
THZ SPECTROSCOPY OF 1T-TaS2
Figure 1B shows the THz linear transmission of 1T-TaS2 in free space upon heating and cooling as a
function of the temperature of the sample support (Text). This captures the first-order transition
between the NC-CDW metallic phase and the C-CDW insulating phase. The phase transition results
in: i) an increase of the low frequency transmission (0.2 THz < < 1.5 THz) below the effective
critical temperature, which is consistent with a transition to an insulating behavior (Drude-like
response of free carriers vanishes in the insulating phase [40,41]); and ii) the emergence below Tceff
of infrared-active optical phonons at 1.58 THz, 2.04 THz and 2.35 THz, which are screened by the
free carriers and therefore not visible in the metallic phase (Fig. 1C, insets, report time-domain THz
traces representative for the two phases). We will use the temperature dependence of the integrated
low-frequency transmission (0.2 THz < < 1.5 THz) as a marker which tracks the charge order
dynamics in 1T-TaS2 and hence the metal-to-insulator phase transition (Fig. 1C). The low frequency
transmission is directly mapped into the evolution of the Drude optical conductivity 1()
representative of the free carriers response (Supplementary Information). Analogous transition
temperatures can be obtained by tracking the temperature dependence of the transmission at the
phonon frequency (Methods). The temperature dependence of the integrated low-frequency
transmission (0.2 THz < < 1.5 THz) for the material in free space is shown in Fig. 1C. The
difference between the results obtained upon heating and cooling the sample in free space marks the
hysteresis associated to the first-order phase transition. The phase transition in free space upon heating
occurs at Text = 181 K and at 143 K upon cooling from the metallic phase. Note that the smooth
transition observed can be ascribed to the presence of intrinsic inhomogeneities and strain in the
system, which may smear out the first-order transition [42-44] (Methods). The effective critical
temperature Tceff measured in our set-up differs from the literature value [31] by about 35 K. This
discrepancy is attributed to the difference between the internal temperature of the sample (Tint) and
the temperature of the cryostat’s cold finger (Text), as a consequence of the small thermal conductivity
of the silicon nitride membranes holding the 1T-TaS2 sample [3]. A finite-elements simulation of the
membrane’s thermal profile is in quantitative agreement with the measured temperature shift (details
in the Methods section).
CHARACTERIZATION OF 1T-TaS2 IN CRYOGENIC THz FABRY PÉROT CAVITIES
Figure 2 presents the THz linear transmission as a function of the sample holder temperature (cooling
in Fig. 2A, and heating in Fig. 2B) of 1T-TaS2 in free space and embedded in the center of an optical
cavity with resonant frequency 𝜔𝑐 = 11.5 GHz and quality factor 𝑄 4 (Methods). The placement
of the sample in such a cavity results in a modification of Tceff for the metal-to-insulator transition,
which is observed at 136 K on heating and at 109 K on cooling. The modification of Tceff depends
also on the thermal cycle. Indeed, a change of Tceff of 44 K is observed if the critical temperature is
approached from the insulating state (heating), while a shift of 33 K is obtained starting from the
metallic phase (cooling), resulting in a shrinking of the hysteresis of about 11 K. We highlight that
Tceff is independent from the input intensity of the THz field, which, therefore, acts only as a probe
and does not introduce a detectable thermal load on the sample (see Supplementary Fig. S15 for
measurements with different THz field strengths).
Next, we varied the cavity geometry and measure Tceff as a function of the alignment of the cavity
mirrors. We quantify the cavity misalignment as the sum of the misalignment angles of the two cavity
mirrors with respect to the parallel mirrors configuration. The temperature dependence of the low-
frequency THz transmission (0.2 THz < < 1.5 THz integration range) at different mirror alignments
is shown in Fig 3A for the temperature scans performed by heating and cooling the cold-finger sample
holder. Misaligning the mirrors modifies Tceff, which approaches the free space value when the cavity
is highly misaligned (Fig. 3A). In the inset of Fig. 3A, we show that a switch between the metallic
Fig. 2: Renormalization of the effective critical temperature of the metal-to-insulator phase transition within the
cavity. A, B. Temperature-dependent THz transmission upon cooling (A) and heating (B) for a sample held in free space
(left) and one placed in the middle of the 11.5 GHz cavity (right). C. Comparison between the hysteresis in free space
and within the 11.5 GHz cavity plotted as the integrated cavity transmission in the range 0.2 THz < < 1.5 THz. The
free-space data have been arbitrarily translated along the horizontal axis to overlap with the cavity integrated transmission.
In the cavity, a renormalization of the effective critical temperature of 44 K (33 K) towards lower temperatures is
measured upon heating (cooling) the sample. This results in a shrinking of the effective phase-transition hysteresis of 11
K within the cavity.
and the dielectric linear response is obtained at fixed Text by solely changing the cavity alignment.
As any misalignment of the cavity mirrors reduces the photon lifetime within the cavity (and hence
the quality factor), the sensitivity of Tceff not only to the presence of the cavity but also to the mirrors
alignment, is suggestive of a cavity-mediated effect. This is further supported by the fact that
misaligning the cavity mirrors not only changes the effective critical temperature, but also increases
the effective hysteresis of the metal-to-insulator transition towards its free space value.
Figure 3B reports the THz transmission as a function of the cavity fundamental frequency at a fixed
cold-finger temperature (Text = 150 K). The results reveal that the cavity-mediated change of Tceff
overcomes the free space hysteresis, thus enabling a reversible touchless control of the metal-to-
insulator phase transition. Upon reducing the distance between the mirrors, we detected the phase
Fig. 3: Dependence of the effective critical temperature on the cavity geometry. A. Dependence of the effective metal-
to-insulator phase transition as a function of the cavity alignment for the 11.5 GHz cavity. The hysteresis is plotted for
each misalignment angle as the integrated low frequency transmission (0.2 THz < < 1.5 THz). In the inset panel, the
THz fields detected at the output of the coupled 11.5 GHz cavity at fixed temperature (Text = 154 K) as a function of the
mirrors alignment. Transition from the dielectric to the metallic behavior is detected passing from the misaligned to the
aligned configuration. B. Reversible cavity control of the metal-to-insulator transition at fixed temperature (Text = 150
K). The hysteresis as a function of the cavity fundamental mode is plotted as the evolution of the integrated low frequency
THz transmission (0.2 THz < < 1.5 THz). The insets show the evolution of the time domain THz fields transmitted for
different values of the cavity frequency ranging from 50.0 GHz to 11.5 GHz (opening cavity case) and from 11.5 GHz to
50.0 GHz (closing cavity case), demonstrating the reversible switching between the two phases.
摘要:

Cavity-mediatedthermalcontrolofmetal-to-insulatortransitionin1T-TaS2GiacomoJarc1,2,ShahlaYasminMathengattil1,2,AngelaMontanaro1,2,3,FrancescaGiusti1,2,EnricoMariaRigoni1,2,RudiSergo2,FrancescaFassioli3,4,StephanWinnerl5,SimoneDalZilio6,DraganMihailovic7,PeterPrelovšek7,MartinEckstein8,andDanieleFaus...

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