First-Principles Ultrafast Exciton Dynamics and Time-Domain Spectroscopies Dark-Exciton Mediated Valley Depolarization in Monolayer WSe 2 Hsiao-Yi Chen1 2 3and Marco Bernardi1 2

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First-Principles Ultrafast Exciton Dynamics and Time-Domain Spectroscopies:
Dark-Exciton Mediated Valley Depolarization in Monolayer WSe2
Hsiao-Yi Chen1, 2, 3 and Marco Bernardi1, 2,
1Department of Applied Physics and Materials Science,
California Institute of Technology, Pasadena, California 91125
2Department of Physics, California Institute of Technology, Pasadena, California 91125
3RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama, 351-0198, Japan
Calculations combining first-principles electron-phonon (e-ph) interactions with the Boltzmann
equation enable studies of ultrafast carrier and phonon dynamics. However, in materials with
weak Coulomb screening, electrons and holes form bound excitons and their scattering processes
become correlated, posing additional challenges for modeling nonequilibrium physics. Here we show
calculations of ultrafast exciton dynamics and related time-domain spectroscopies using ab initio
exciton-phonon (ex-ph) interactions together with an excitonic Boltzmann equation. Starting from
the nonequilibrium exciton populations, we develop simulations of time-domain absorption and
photoemission spectra that take into account electron-hole correlations. We use this method to study
monolayer WSe2, where our calculations predict sub-picosecond timescales for exciton relaxation
and valley depolarization and reveal the key role of intermediate dark excitons. The approach
introduced in this work enables a quantitative description of nonequilibrium dynamics and ultrafast
spectroscopies in materials with strongly bound excitons.
I. INTRODUCTION
First-principles methods based on density functional
theory (DFT) [1,2] can characterize electron-phonon
(e-ph) interactions, enabling quantitative studies of
nonequilibrium electron dynamics [35] and transport
properties in materials ranging from semiconductors to
organic crystals and correlated electron systems [610].
However, these methods focus on the independent dy-
namics of electron and hole carriers, whereas in many
semiconductors, wide-gap insulators, and nanostructured
materials, where the Coulomb interaction is weakly
screened, excited electrons and holes can form charge-
neutral bound states (excitons) which dominate optical
response and light emission [1113].
Exciton are key to many scientific and technological
advances exciton diffusive dynamics governs the effi-
ciency of energy and light-emitting devices [14,15], and
excitons trapped in two-dimensional (2D) materials can
provide stable optical qubits [16]. Excitons can addition-
ally carry spin and valley quantum numbers, with poten-
tial applications to information storage and processing in
spintronic and valleytronic devices [1719]. Atomically-
thin transition metal dichalcogenides (TMDs) have be-
come a widely used platform for experimental studies of
exciton physics due to their robust excitonic effects per-
sisting up to room temperature [12,13].
Time-domain spectroscopies can probe the energy and
internal structure of excitons, and characterize their
interactions and dynamics down to the femtosecond
timescale [12,2022]. Yet, microscopic interpretation of
these experiments is difficult, especially in cases where
excitons are present. Therefore the development of theo-
retical methods to study exciton dynamics and its spec-
bmarco@caltech.edu
troscopic signatures remains a priority.
Although analytical and semiempirical models have
been proposed to study exciton dynamics [2326], predic-
tive first-principles calculations would be desirable to in-
terpret novel experiments in this rapidly evolving arena.
Much first-principles work on excitons has focused on
improving the description of their binding energy, opti-
cal response, and radiative lifetime, typically using the
ab initio Bethe-Salpeter equation (BSE) approach [27
32]. Combined with linear-response DFT, this frame-
work has recently enabled calculations of exciton-phonon
(ex-ph) interactions and the associated phonon-induced
exciton relaxation times and photoluminescence (PL)
linewidths [33,34]. These advances set the stage for real-
time simulations of exciton dynamics and time-domain
spectroscopies.
Here we show calculations of ultrafast exciton dynam-
ics based on exciton properties and ex-ph interactions
computed from first principles with the BSE and vali-
dated via the PL linewidth. Our real-time simulations
employ a bosonic Boltzmann transport equation (BTE)
to evolve in time the exciton populations and character-
ize phonon-induced exciton relaxation. We apply this
method to monolayer WSe2, where we determine the ul-
trafast timescales for phonon-induced bright-to-dark ex-
citon relaxation (0.5 ps at 300 K) and exciton valley
depolarization (185 fs at 77 K and 65 fs at 300 K).
By comparing these results with hole carrier dynamics
in the single-particle picture, we show that dark exci-
tons can debottleneck intervalley exciton scattering and
speed it up by orders of magnitude. Using the exci-
ton populations as input, we also predict time-resolved
angle-resolved photoemission (tr-ARPES) and transient
absorption spectra including excitonic effects. This work
demonstrates a quantitative framework for exciton dy-
namics and sheds light on ultrafast optical processes in
2D-TMDs.
arXiv:2210.05964v1 [cond-mat.mtrl-sci] 12 Oct 2022
2
II. METHODS
A. Exciton band structure
The effective mass approach has been widely used to
model exciton dynamics [35,36], but now one can com-
pute the full exciton band structure from first principles
using DFT plus the finite-momentum BSE [33,3739].
With this approach, we compute the exciton energies
and wave functions in monolayer WSe2for exciton mo-
menta Qon a regular Brillouin zone (BZ) grid (see Ap-
pendix A). The resulting exciton band structure is shown
in Fig. 1(a), where we highlight the energy of the two de-
generate optically-active (or “bright”) excitons at Γ, also
known as A-excitons in 2D-TMDs, whose computed en-
ergy of E0=1.665 eV agrees with experiments [40]. These
two A-excitons consist, respectively, of an electron-hole
pair in the electronic K- or K0-valleys [12].
The exciton band structure has two nearly-degenerate
minima associated with a spin-singlet dark exciton at
Q and a spin-triplet dark exciton at M, with the latter
lower by 20 meV due to the lack of exchange repulsion.
In Fig. 1(b), we show the main electronic transitions that
make up the dark excitons with momenta Q= K, Q, and
M, together with the corresponding electron-hole pairs in
the electronic BZ. For these dark excitons, the hole oc-
cupies the valence band edge at the K or K0BZ corner,
and the electron occupies the conduction band minima
at K or Q.
Exciton energy (eV)
bright exciton!
(E=1.665 eV)
Μ Γ KΜQ
(a)
(b)
+
-
Μ+-
Q
+-
K
minimum !
(E=1.51 eV)
1.50
1.60
1.70
1.80
Q
K
M
Γ
K
M
Q
K’
Electron energy (eV)
+
-
Μ
+
-
Q
+
-
K
Γ
K
M
Q
K’
exciton energy (eV)
phonon window
bright exciton!
(E=1.665 eV)
Μ Γ KΜQ
(a)
(b)
+
-
Μ
+
-
Q
+
-
K
Minimum !
(E=1.510 eV)
1.50
1.60
1.70
1.80
exciton energy (eV)
phonon window
bright exciton!
(E=1.665 eV)
Μ Γ KΜQ
(a)
(b)
+
-
Μ
+
-
Q
+
-
K
Minimum !
(E=1.510 eV)
1.50
1.60
1.70
1.80
exciton energy (eV)
phonon window
bright exciton!
(E=1.665 eV)
Μ Γ KΜQ
(a)
(b)
+
-
Μ
+
-
Q
+
-
K
Minimum !
(E=1.510 eV)
1.50
1.60
1.70
1.80
FIG. 1. (a) Exciton energy vs. momentum dispersion in
monolayer WSe2, with minima at M and Q. The two lowest
bright excitons are the 3rd and 4th states at Γ, with energy
E0= 1.665 eV indicated with a blue dot. (b) Electronic band
structure showing the transitions that make up dark excitons
with Q= (K,Q,M) (left) and the corresponding electron-
hole pairs shown schematically in the electronic BZ (right).
B. Exciton-phonon interactions and PL linewidth
We compute the ex-ph interactions in monolayer WSe2
starting from the e-ph interactions and the BSE exci-
ton wave functions, using an approach we developed in
Ref. [33] (see Appendix B). The resulting ex-ph matrix
elements Gnmν (Q,q) describe the probability amplitude
for an exciton in state |Sn(Q)ito transition to state
|Sm(Q+q)iwhen scattered by a phonon with mode ν
and momentum q. Our e-ph, BSE, and ex-ph calcula-
tions include spin-orbit coupling by using fully relativis-
tic pseudopotentials.
We validate the accuracy of our ex-ph interactions
by computing the intrinsic PL linewidth due to ex-ph
processes and comparing it with experiments. We fo-
cus on the bright A-exciton, which can recombine ra-
diatively by emitting circularly polarized light [18], and
compute its ex-ph scattering rate to obtain the intrinsic
PL linewidth [33,42]:
ΓnQ(T) = 2π
NqX
q
|Gn,mν (Q,q)|2
×(Nνq+1+FmQ+q)×δ(EnQE0
mQ+q~ωνq)
+(NνqFmQ+q)×δ(EnQE0
mQ+q+~ωνq),
(1)
where we set n= 3 and Q= 0 for the A-exciton, and
Nqis the number of q-points in the BZ, EmQare ex-
citon energies, and ωνqare phonon frequencies; Nνq(T)
is the thermal occupation for phonons and FmQ(T) for
excitons, both satisfying the Bose-Einstein distribution
at temperature T.
The temperature dependence of our computed PL
linewidth, shown in Fig. 2, agrees with experiments from
Ref. [41], although to match the experimental curve we
Linewidth (meV)
Temperature (K)
FIG. 2. Computed PL linewidth from ex-ph interactions in
monolayer WSe2, shown as a function of temperature and
compared with experiment [41]. The inset shows two main
ex-ph scattering processes for bright exciton relaxation, Γ to
M and Γ to K. The computed results are shifted upward by
7 meV to match experiment.
摘要:

First-PrinciplesUltrafastExcitonDynamicsandTime-DomainSpectroscopies:Dark-ExcitonMediatedValleyDepolarizationinMonolayerWSe2Hsiao-YiChen1,2,3andMarcoBernardi1,2,1DepartmentofAppliedPhysicsandMaterialsScience,CaliforniaInstituteofTechnology,Pasadena,California911252DepartmentofPhysics,CaliforniaInst...

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