Phonon-limited carrier mobilities and Hall factors in 4H-SiC from rst principles Tianqi Deng1 2Deren Yang1 2and Xiaodong Pi1 2y
Phonon-limitedcarriermobilitiesandHallfactorsin4H-SiCfrom rstprinciplesTianqiDeng,1,2,DerenYang,1,2andXiaodongPi1,2,y1StateKeyLaboratoryofSiliconMaterialsandSchoolofMaterialsScienceandEngineering,ZhejiangUniversity,Hangzhou,Zhejiang310027,China2InstituteofAdvancedSemiconductors&ZhejiangProvincialKe...
2025-05-02
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