
Beyond ab initio reaction simulator: an application to GaN metalorganic
vapor phase epitaxy
A. Kusaba,1S. Nitta,2K. Shiraishi,2T. Kuboyama,3and Y. Kangawa1
1)Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580,
Japan
2)Institute of Materials and Systems for Sustainability, Nagoya University, Chikusa-ku, Nagoya 464-8601,
Japan
3)Computer Centre, Gakushuin University, Toshima-ku, Tokyo 171-8588, Japan
(*Electronic mail: kusaba@riam.kyushu-u.ac.jp)
(Dated: 24 October 2022)
To develop a quantitative reaction simulator, data assimilation was performed using high-resolution time-of-flight mass
spectrometry (TOF-MS) data applied to GaN metalorganic vapor phase epitaxy system. Incorporating ab initio knowl-
edge into the optimization successfully reproduces not only the concentration of CH4(an impurity precursor) as an
objective variable but also known reaction pathways. The simulation results show significant production of GaH3, a
precursor of GaN, which has been difficult to detect in TOF-MS experiments. Our proposed approach is expected to be
applicable to other applied physics fields that require quantitative prediction that goes beyond ab initio reaction rates.
Crystal growth technology of III-nitride semiconductors
has been actively developed to fabricate optical and electronic
devices1–6. Reactor simulators that solve for heat and mass
transfer, chemical reactions, and phase transitions have played
a role in these developments7–12. The reaction model and its
kinetic parameters are key components of reactor simulators,
especially for the reaction system for chemical vapor deposi-
tion. It is generally quite difficult to determine the complete
kinetics of complex gas-phase reaction networks using exper-
iments alone. Thus, such reaction systems have been studied
by ab initio calculations, e.g., density functional theory (DFT)
and transition state theory (TST)13–21. Increased semiconduc-
tor device performance has recently necessitated the use of
simulators for quantitative process optimization that goes be-
yond obtaining a qualitative understanding22–25. However, the
predictive performance of ab initio reaction rates is often in-
adequate for such quantitative requirements.
The aim of this study is to realize quantitative simulation
by data assimilation for a reaction model with rate constant
parameters for the GaN metalorganic vapor phase epitaxy
(MOVPE) system. A complex reaction network generally in-
volves many parameters, and experimental measurements are
costly and provide limited data. Under these circumstances,
two measures are taken to ensure that the solution is not indef-
inite or an overfit. First, a reduced reaction model is adopted
that excludes many radical reactions and consists of fewer re-
actions than conventional models21. This reduced model has
been demonstrated to reproduce the latest experimental fact
on the reaction pathway that the removal of the methyl group
in trimethylgallium (TMG) decomposition is caused by reac-
tions with NH326. Second, the optimization is performed with
the strategy that not only focuses on minimizing simulation
errors, but also maintains the theoretical basis from ab initio
calculations. In addition, the reaction pathway becomes a fun-
damental consideration in selecting a solution. This approach
is used to develop a reliable and quantitative reaction simula-
tor in this study.
Experimental data were obtained by high-resolution time-
of-flight mass spectrometry (TOF-MS)26–28 as the detection
intensity of the individual molecules in MOVPE environ-
ments. This state-of-the-art mass spectrometric technique can
distinguish between NH2and CH4, which is not possible us-
ing conventional quadrupole mass spectrometry (QMS)29. In-
deed, this study relies on the CH4concentration data con-
verted from its intensity data. Details of the data conversion
are presented in Appendix A. Experimental measurements
were performed dozens of times at different temperatures, but
only data with kinetic information were used for data assimi-
lation.
The input–output relationship of the simulator is concisely
expressed as
ˆc(x) = f(Tset ;k).(1)
Here, the output ˆc(x)is the concentration distribution, the in-
put Tset is the heater temperature (an experimental condition),
the simulation parameter kis the reaction rate constant, and
the simulator fsolves the ordinary differential equations of
the reaction kinetics for our reduced reaction model shown in
Table I. The reaction rate constant is determined using DFT:
B3LYP/6-311G(d,p) and TST21. The modified Arrhenius for-
mat given below is used to model the temperature dependence
of the ab initio rate constant and subsequently tuned to better
reproduce the experimental data:
k= (qAA)Texp−(qEEact )
kbT.(2)
Here, the parameters Eact and Aare the activation energy and
preexponential factor obtained from ab initio calculations, and
qEand qAare tuning coefficients for these parameters. Note
that Eact is not equal to the simple DFT activation energy be-
cause of the effects of TST. More details on the simulator can
be found in Appendix B.
A multiobjective optimization was performed to determine
the k(i.e., qEand qA) that maintains the theoretical basis ob-
tained from ab initio calculations and reproduces the experi-
mental data well. The ab initio ratios of Eact were used as the
theoretical basis. The concentration of CH4(an impurity pre-
cursor) was used as a measure of the simulation performance
arXiv:2210.11748v1 [cond-mat.mtrl-sci] 21 Oct 2022