Single Event Tolerance of X-ray SOI Pixel Sensors Kouichi Haginoa Mitsuki Hayashidab Takayoshi Kohmurab Toshiki Doib Shun Tsunomachib Masatoshi Kitajimab Takeshi G. Tsuruc Hiroyuki Uchidac

2025-05-03 0 0 346.69KB 9 页 10玖币

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Single Event Tolerance of X-ray SOI Pixel Sensors

Kouichi Haginoa,*, Mitsuki Hayashidab, Takayoshi Kohmurab, Toshiki Doib,

Shun Tsunomachib, Masatoshi Kitajimab, Takeshi G. Tsuruc, Hiroyuki Uchidac,

Kazuho Kayamac, Koji Morid, Ayaki Takedad, Yusuke Nishiokad, Masataka Yukumotod,

Kira Miedad, Syuto Yonemurad, Tatsunori Ishidad, Takaaki Tanakae, Yasuo Araif,

Ikuo Kurachig, Hisashi Kitamurah, Shoji Kawahitoi, Keita Yasutomii

aKanto Gakuin University, Research Advancement and Management Organization, 1-50-1 Mutsuura-higashi,

Kanazawa-ku, Yokohama, Japan, 236-8501

bTokyo University of Science, School of Science and Technology, Department of Physics, 2641 Yamazaki, Noda,

Chiba, Japan, 278-8510

cKyoto University, Faculty of Science, Department of Physics, Kitashirakawa-Oiwakecho, Sakyo-ku, Kyoto, Japan,

606-8502

dUniversity of Miyazaki, Faculty of Engineering, Department of Applied Physics, 1-1 Gakuen- Kibanadai-Nishi,

Miyazaki, Miyazaki, Japan, 889-2192

eKonan University, Department of Physics, 8-9-1 Okamoto, Higashinada, Kobe, Hyogo, Japan, 658- 8501

fHigh Energy Accelerator Research Organization (KEK), Open Innovation Promotion Department, 1-1 Oho,

Tsukuba, Ibaraki, Japan, 305-0801

gD&S Inc., 774-3-213 Higashiasakawacho, Hachioji, Tokyo, Japan, 193-0834

hNational Institute of Radiological Sciences, National Institutes for Quantum and Radiological Science and

Technology, 4-9-1 Anagawa, Inage-ku, Chiba, Japan, 263-8555

iShizuoka University, Research Institute of Electronics, 3-5-1 Johoku, Naka-ku, Hamamatsu, Shizuoka, Japan,

432-8011

Abstract. We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX,

developed for the future X-ray astronomical satellite FORCE. In this work, we measure the cross-section of single

event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET)

ranging from 0.022 MeV/(mg/cm2)to 68 MeV/(mg/cm2). From the SEU cross-section curve, the saturation cross-

section and threshold LET are successfully obtained to be 3.4+2.9

−0.9×10−10 cm2/bit and 7.3+1.9

−3.5MeV/(mg/cm2),

respectively. Using these values, the SEU rate in orbit is estimated to be .0.1 event/year primarily due to the

secondary particles induced by cosmic-ray protons. This SEU rate of the shift register on XRPIX is negligible in the

FORCE orbit.

Keywords: single event effect, silicon-on-insulator, X-ray detector, X-ray astronomy.

*Kouichi Hagino, hagino@kanto-gakuin.ac.jp

1 Introduction

The X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX is a monolithic active pixel

sensor developed as the main imaging spectrometer onboard the FORCE satellite.1–3The FORCE

satellite is an X-ray astronomical satellite aiming to be launched in the 2030s. It will achieve

a broadband X-ray imaging spectroscopy in an energy range of 1–79 keV with a high angular

resolution better than 15 arcsec. XRPIX is one of the main imagers of the FORCE satellite, and is

fabricated with a 0.2µmfully depleted SOI technology. Utilizing the SOI technology, XRPIX is

composed of a high-resistivity Si sensor layer and a low-resistivity CMOS circuit layer with a SiO2

insulator layer in between as shown in Fig. 1. This structure enables to achieve a thick depletion

layer as thick as a few hundred micrometers and to implement full CMOS readout circuitry on

each pixel. One of the most remarkable characteristics of XRPIX is the event-driven readout,

arXiv:2210.05049v1 [astro-ph.IM] 10 Oct 2022

CMOS

circuit

sense node

X-ray



Back bias voltage

CMOS

circuit

CMOS

circuit

~300−500 μm

~0.2 μm

~10 μm

Sensor

(high ρ Si)

Burred Oxide

(BOX)

Pixel size ~36 μm

Si sensor

Fig 1 Schematic view of XRPIX.

where only signals from the pixels with X-ray events are readout, by using the trigger function

implemented in each pixel circuit. It realizes high timing resolution better than ∼10 µs, which

enables an extremely low background observation by adopting the anti-coincidence technique.

The tolerance to single event effect (SEE) should be considered in the development of the

CMOS integrated circuits for space use. The SEE is a radiation effect caused by a strike of a single

energetic particle. There are two major categories in the SEE: single event upset (SEU) and single

event latch-up (SEL).4In the SEU, the logical state of a digital circuit is changed by the free charge

generated by the incident particle. It is not destructive but causes the malfunction of the circuit.

On the other hand, the SEL is potentially destructive because it results in a large current by turning

on a parasitic thyristor structure in the CMOS circuit.

Since the CMOS circuit of XRPIX is SOI-CMOS, single event tolerance should be better than

that of bulk CMOS devices.5In principle, the SEL cannot occur because there is no parasitic thyris-

tor in the SOI-CMOS. The SEU is also mitigated because the SEU-sensitive volume is reduced in

the SOI-CMOS. However, it is unknown whether the SEU tolerance of XRPIX is enough for the

FORCE satellite. In particular, in the FORCE satellite, the CMOS circuit of the ﬂight model of

XRPIX will contain a lot of shift registers storing operational parameters. If SEU will frequently

occur in such shift registers, it would have a strong impact on the operations of XRPIX in orbit.

Thus, in this work, we measured the SEU cross-section curve of the shift register on XRPIX for

the ﬁrst time, and quantitatively evaluated its SEU tolerance. The rest of the paper is organized as

follows. In Sec. 2we describe the details of the heavy-ion irradiation experiment. In Sec. 3we

present the main results, and estimate the SEU rate in orbit in Sec. 4. We conclude in Sec. 5.

2 Heavy-ion Irradiation Experiment

2.1 Test Device: XRPIX8

We irradiated heavy ions to XRPIX at the Heavy Ion Medical Accelerator in Chiba (HIMAC) in

the National Institute of Radiological Sciences. The test device used in this experiment was the

current prototype of the XRPIX series named “XRPIX8”. XRPIX8 has a p-type sensor layer with a

thickness of 300 µm. It has 96×96 pixels with a pixel size of 36×36 µm2, so that the sensitive area

is approximately 3.5×3.5 mm2. Adopting the pinned depleted diode (PDD) structure, XRPIX8 has

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SingleEventToleranceofX-raySOIPixelSensorsKouichiHaginoa,*,MitsukiHayashidab,TakayoshiKohmurab,ToshikiDoib,ShunTsunomachib,MasatoshiKitajimab,TakeshiG.Tsuruc,HiroyukiUchidac,KazuhoKayamac,KojiMorid,AyakiTakedad,YusukeNishiokad,MasatakaYukumotod,KiraMiedad,SyutoYonemurad,TatsunoriIshidad,TakaakiTanak...

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Single Event Tolerance of X-ray SOI Pixel Sensors Kouichi Haginoa Mitsuki Hayashidab Takayoshi Kohmurab Toshiki Doib Shun Tsunomachib Masatoshi Kitajimab Takeshi G. Tsuruc Hiroyuki Uchidac

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