
3
The Frenkel Exciton states |XTiiare assumed to be spa-
tially invariant with the identical on-site energies εXT =2.3eV
as a typical value. The relative energies of the charge sep-
arated states εCS
i−εCS
1are defined by the Coulomb bar-
rier in FIG. 1(b) with the inter-oligothiophene distance of
0.38 nm12,13. The potential energy surface for CS state is ap-
proximately unaffected by dipole self energy41 since the per-
manent dipole of CS states should be parallel to the stand-
ing wave vector, as shown in FIG. 1(a). The excess en-
ergy of the interfacial exciton-charge transfer transition that
induces a vibronic charge transfer state is expressed by the
energetic offset between the interfacial excitonic and charge
transfer states ∆Eoffset =εXT −εCS
1. The other intermolec-
ular coupling parameters are determined from ab-initio the-
ory calculation by Tamura and coworkers12,13,17,46,47: The
nearest-neighbour coupling within the H-aggregate excitonic
states and the charge separated states are JXT =0.1eV and
JCS =−0.12eV, respectively. Charge transfer process at the
interface can be described by the strength Jint =0.2eV.
The cavity photon mode frequency ωcand collective light-
matter strong coupling strength G=g√Nunder the rotating
wave approximation are adjustable by cavity preparation.48
Experimentally, one can change the inter-mirror distance to
modify ωcas the frequency of a standing wave, and change the
number of molecules in one oligothiophene chain Nyto mod-
ify single site-photon coupling strength because g∝pNy.
Nycan be large enough to have the system reach the strong
light-matter coupling regime in a typical Fabry–Pérot micro-
cavity (2 mirrors in the size of 1 inch by 1 inch and the dis-
tance between them of several hundred nanometers). In this
model, we assume cavity photon is single mode as a stand-
ing wave under long-wavelength limit, while other work re-
ports the cases where cavity photons have non-zero in-mirror-
plan momentum.49 Only XT states can effectively achieve
light-matter coupling, while CS are decoupled from the cav-
ity, since CS states have negligible transition strength, regard-
less of the cavity, because the transition dipole depends on
electron-hole overlap.
Vibronic coupling induced internal conversion and de-
phasing for the electronic density matrix ρe(t)is calculated
by Bloch-Redfield Theory. Due to the weak electronic-
vibrational coupling HI17, Quantum Markovianity can deal
with the vibrational modes as a large thermal reservoir at
thermal-equilibrium ρv50. The quantum master equation in
the Dirac Picture (represented by tildes) reads
d˜
ρe(t)
dt =−1
¯
h2Z∞
0dτTrv˜
HI(t),˜
HI(t−τ),˜
ρe(t)⊗ρv
(2)
Lindbladians γXLX[ρe] = γXXρeX†−1
2X†X,ρe are
added to Eq. (2) for cavity loss (X=|vacih1|,γX=κ=
20THz) and electron-hole recombination of Frenkel exciton
(X=|vacihXTi|,γX=γdecay =1GHz). The free charge car-
rier is described by the charge separation beyond |CSNiand its
generation is expressed as a Lindbladian with X=|vacihCSN|
and γX=γout =10THz. The observable of interest, the free
charge carrier generation rate, can be obtained by
IFC(t) = −γoutTrP
excitationL|vacihCSN|[ρe(t)](3)
where P
excitation =∑i|XTiihXTi|+∑i|CSiihCSi|+|1ih1|is
the projector operator to the single excitation subspace. The
details of the theory are in Supplementary Material S1.3.
This Hamiltonian and quantum dynamics framework pro-
vides a lens into the complex interplay between light-matter
coupling, delocalization, thermalization, dephasing and dissi-
pation.
III. RESULTS AND DISCUSSION
In section III A and III B, we mainly focus on the case of
fullerene packing type 7C60 ×1L (Coulomb barrier 0.25 eV),
interfacial energy offset ∆Eoffset =0eV (no initial vibronic ef-
fect), photon mode ωc=2.495eV and collective light-matter
coupling G=0.12eV, as an example to illustrate the effect
of polaritons. The cases for different parameters will be dis-
cussed in section III C.
A. Eigenspectrum Calculation
FIG. 2(a) depicts the eigenstates and absorption spectrum
of the bare system. A low-energy localized interface trap
state emerges, where an energy gap of 0.25 eV between the
interface trap and the lowest delocalized CS manifolds cor-
responds to the Coulomb barrier for fullerene packing type
7C60 ×1L. At higher energies, the delocalized excitonic man-
ifolds become mixed with delocalized charge separated states
below the effective top of the barrier, suggesting a tunneling
effect, which is beneficial for free charge carrier generation.
However, the dark nature of these XT-CS mixed state prevents
populating from photoexcitation but internal conversion only.
The absorption spectrum demonstrates a bright state of the
H-aggregate at the upper edge of the XT manifolds, mixing
weakly with the CS manifolds. Above the bright state, there
are some delocalized and dark CS eigenstates. Thus by pump-
ing the bright state, free charge carrier generation mostly oc-
curs after population transfer downhill to dark XT-CS mixed
state or uphill to dark CS eigenstates.
FIG. 2(b) depicts the eigenstates and absorption spectrum
of the cavity system, where the photon mode ωc=2.495eV
is resonant with the bare bright state to achieve strong light-
matter hybridization. The upper polariton (EUP =2.61eV)
and lower polariton (ELP =2.36eV) show up with larger
broadening than the bare bright state, signifying inhomoge-
neous broadening (see Supplementary Material S2.2).
Within the absorption linewidth, the polaritons present
large CS components. As shown in FIG. 2, the CS fraction
for upper and lower polariton branchs are 51% and 34% re-
spectively, while the CS fraction for the bare bright state is
only 7%. In contrast to the bare bright state, the optically ac-
tive polaritons are direct and instantaneous free charge carrier
generators.
The inhomogeneous broadening and CS components fea-
tures indicate that polaritons |UP(+)/LP(−)iare not merely
a hybridization between photon |1iand bare bright state |Bi,