1 Topological Phase Transitions and Berry -Phase Hysteresis in Exchange -Coupled Nanomagnets

2025-04-30 0 0 2.49MB 29 页 10玖币
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1
Topological Phase Transitions and Berry-Phase Hysteresis in
Exchange-Coupled Nanomagnets
Ahsan Ullah,* Xin Li, Yunlong Jin, Rabindra Pahari, Lanping Yue, Xiaoshan Xu, Balamurugan
Balasubramanian, David J. Sellmyer, and Ralph Skomski
Department of Physics & Astronomy and Nebraska Center for Materials and Nanoscience, University of
Nebraska, Lincoln, NE 68588
*E-mail: aullah@huskers.unl.edu
Deceased
Abstract
Topological phase in magnetic materials yields a quantized contribution to the Hall effect
known as the topological Hall effect (THE), which is often caused by skyrmions, with each
skyrmion creating a magnetic flux quantum ±h/e. The control and understanding of topological
properties in nanostructured materials is the subject of immense interest for both fundamental
science and technological applications, especially in spintronics. In this article, the electron-
transport properties and spin structure of exchange-coupled Co nanoparticles with an average
particle size of 13.7 nm are studied experimentally and theoretically. Magnetic and Hall effect
measurements identify topological phase transitions in the exchange-coupled Co nanoparticles and
discover a qualitatively new type of hysteresis in the topological Hall effect, namely Berry-phase
hysteresis. Micromagnetic simulations reveal the origin of the topological Hall effect, namely the
chiral domains with domain-wall chirality quantified by an integer skyrmion number. These spin
structures are different from the skyrmions formed due to Dzyaloshinskii-Moriya interactions in
B20 crystals and multilayered thin films and caused by cooperative magnetization reversal in the
exchange-coupled Co nanoparticles. An analytical model is developed to explain the underlying
physics of the Berry-phase hysteresis, which is strikingly different from the iconic magnetic
hysteresis and constitutes one aspect of 21st century reshaping of our view on nature at the
borderline of physics, chemistry, mathematics, and materials science.
I. INTRODUCTION
Topological phase transitions (TPTs) permeate areas such as superfluid and superconductors
[1, 2], basic quantum mechanics [3, 4], fractional quantum-Hall effect [5], and topological
insulators [6] and therefore have gained significant interest in both science and technology. TPTs
are very different from ordinary Landau-type phase transitions [4, 7-9]. Rather than involving
symmetry breaking and order-parameter changes, they are characterized by changes in topological
numbers. For example, coffee cups have one hole, located in the handle, and are therefore
characterized by the topological number (Euler genus) g = 1. A flat pancake has no holes (g = 0)
so that the piercing of a number of holes into a pancake is a trivial example of a TPT.
Topological phase transition is in contrast to magnetic hysteresis, which is based on a phase
transition between an ordered low-temperature and a disordered high-temperature [1-6, 10, 11,
12]. An intriguing aspect of magnetic hysteresis is its relation to magnetic phase transitions.
Figures 1(a-b) compare the atomic-scale origin of ferromagnetism with the nanoscale or 'micro-
magnetic' origin of hysteresis. When a ferromagnet is cooled below the Curie temperature Tc, it
develops a spontaneous magnetization Ms (a). This process is a Landau-type phase transition,
defined as a singular change of a local order parameter (M) due to spontaneous symmetry breaking.
The ordered phase has the character of a k = 0 Goldstone mode whose magnetization can point in
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any direction (a). This degeneracy is removed by symmetry-violating terms in the Hamiltonian,
such as magnetic anisotropy [13].
Magnetic hysteresis, Fig. 1(b), is on top of the Landau transition (a). When a magnetic
material is subjected to an external field H, then its magnetization M(H) is generally not single-
valued but splits into ascending and descending branches. A well-known example is small
nanoparticles of volume V and anisotropy energy K1V sin2
in a magnetic field H = Hz. The color
coding throughout this article is Mz(r) = +Ms (red), Mz(r) = Ms (blue) and intermediate (yellow).
For positive K1,
= 0 (red) and
= 180º (blue) are energetically favorable but separated by an
energy barrier K1V (
= 90º). This energy barrier needs some external field to be overcome and is
therefore the reason for the hysteresis.
Fig. 1. Phase transitions: (a) Curie transition (magnetic Landau transition), (b) magnetic hysteresis, (c)
Lifshitz transition in metal, and (d-i) topological phase transition in a magnetic thin film with
perpendicular anisotropy. In (c), the gray areas denote the k-space region occupied by electrons at
the Fermi level. In (d-i), red and blue regions indicate positive (↑) and negative (↓) magnetizations
with respect to the film plane. Topological phase transitions are characterized by topological
numbers Q. The topological protection in the micromagnetic case is experimentally established, for
example through the "blowing" of skyrmions [14 - 16].
While topology has a long history, the idea of topological phase transition goes back to the
Lifshitz transition [4, 7]. Figure 1(c) shows the k-space meaning of the Lifshitz transition in metals.
Itinerant electrons fill the available electron states until the Fermi level is reached. The occupancy
at the Fermi level (gray) depends on the number of electrons, and there are several scenarios that
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change the topological quantum number Q, such as external mechanical pressure and chemical
addition of electrons. Each Fermi-surface region (gray) yields an integer contribution to Q,
irrespective of the size and shape of the pocket. Topological concepts are now applied to many
areas of physics, from skyrmions [7, 8, 13, 15, 16, 17- 20] to topological insulators and other
quantum materials [21-30], all of them fascinating research topics in their own rights.
Figures 1(d-i) show the magnetic analog of the Lifshitz transition in a thin film. The field H
is perpendicular to the film and affects (red) and (blue) regions separated by domain walls
(yellow). The underlying micromagnetism is very similar to that of magnetic skyrmions [31, 32,
33-36] and to XY-model transitions [8]. When an electrical current flows through the film, then
the spins of the conduction electrons exchange-interact with the local magnetization M(r) and
become, in general, noncoplanar noncollinear. This noncollinearity creates a Berry curvature [5],
an emergent magnetic field, and subsequently a Hall-effect contribution known as the topological
Hall effect (THE) [5, 33]. These effects are proportional to the skyrmion density [31, 33, 37, 38]
= 1
4 m ·
m
x m
y (1)
where m = M(r)/Ms is the normalized magnetization and the x-y-plane is the film plane. The
emergent magnetic flux that corresponds to the THE is equal to Q h/e, where Q =
dxdy is the
skyrmion number and h/e is the magnetic flux quantum. In granular thin films, such as the one
considered in the present paper, there are also nonzero derivatives m/∂z. By virtue of
measurement geometry, m/∂z does not contribute to the THE [33], but it is one source of noise
[39]. The skyrmion density is nonzero for spins m(r) that are both noncollinear and noncoplanar,
and Eq. (1) is actually a continuum version of the triple product or spin chirality
s = mi·(mj × mk),
where mi = m(Ri) describes the atomic spins that cause the conduction electrons to develop their
Berry phase.
Much of the fascination with topological phase transitions originate from the great simplicity
of the mathematics conveyed by Eq. (1), which is summarized in Supplement A [45]. In
skyrmionic structures such as those of Figs. 1(d-i), the spins inside the red and blue regions are
parallel (m = ±ez), so that m/∂x, ∂m/∂y, and
are zero. The integral over
therefore reduces to
an integral over the yellow domain-boundary regions in Figs. 1(d-i). It can be shown that
Q = 12𝜋
dl (2)
where
is the curvature of the region's yellow boundary and the integral in Eq. (7) has the value
[40]. This integral is equal to ±1 for any area enclosed by a single yellow boundary [40]. While
Eq. (2) is valid for arbitrary domain shapes, it requires domain walls free of internal singularities
such as Bloch lines [33, 41]. Mathematically, M(r) is a fiber bundle [42] on the base space r and
therefore locally flat but globally nontrivial [43]. In fact, Fig. 1(d-i) provides a simple example of
a bulk-boundary equivalence, a feature that forms a cornerstone of topological physics [22]. The
sign of Q depends on the vorticity [44] of the spin structure, that is, on whether the region enclosed
by the yellow boundary is red (Q = +1) or blue (Q = -1). In particular, Q is independent of the
clockwise or counterclockwise chirality of Bloch walls in the yellow region (Figs. S1, S2 in the
Supplemental Material [45]).
As discussed above, TPTs do not increase or decrease order parameters but consist of
changes in topological numbers. This leads to the question of whether such transitions lead to
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hysteretic features beyond magnetic hysteresis. This hysteresis was not recognized in earlier
research, because available systems had micron-size rather than nanoscale feature sizes, which
makes it very difficult to detect the Berry curvature in Hall-effect measurements. In this paper, we
have fabricated exchange-coupled Co nanoparticle films having a much smaller average size of
about 13.7 nm and show topological phase transitions and berry phase hysteresis using
experiments. The experimental results and the underlying physics are also explained using
micromagnetic simulations and an analytical model.
II. EXPERIMENTAL AND COMPUTATIONAL METHODS
An inert gas condensation-type cluster-deposition method, schematically shown in Fig. S3a in
Supplement B, as described elsewhere [45, 46]. First, Co nanoparticles were produced by a DC
magnetron sputtering using a mixture of argon and helium with a power of 200 W in a gas-
aggregation chamber. After the formation, the nanoparticles were extracted towards the deposition
chamber and deposited as a dense film on a Si (100) substrate having a Hall bar. The base pressure
of the gas-aggregation chamber was 6 10-8 Torr and the respective Ar and He flow rates were
maintained at 400 and 100 SCCM (standard cubic centimeter per minute), respectively. The
pressure in the cluster-formation chamber during the deposition was 0.7 Torr.
The Co nanoparticles were deposited with a low coverage density on a thin carbon film
supported by copper grids for transmission-electron-microscopy measurements using an FEI
Technai Osiris STEM. For magnetic and electron-transport measurements, the cluster-deposited
nanoparticles were deposited for an extended time as a dense film as discussed in our previous
works [46, 47]. The above measurements were performed using a superconducting quantum
interference device (SQUID) and physical property measurement system (PPMS), respectively. A
schematic of a dense nanoparticle film is shown in Fig S3(d) [45], and therefore they are exchange
coupled and conducting. The thickness of the Co nanoparticle film is about 270 nm. The
conduction channels for the Hall contacts were fabricated before depositing the Co nanoparticles,
as described in Ref. 46. To prevent oxidation upon exposure to air, the Co nanoparticle film was
capped with a SiO2 layer of about 10 nm thickness immediately after deposition, using a radio-
frequency magnetron sputtering. The SiO2 cap layer is thinner (about 10 nm) as compared to the
Co nanoparticle film of about 270 nm thickness and is also diamagnetic. Therefore, the film-SiO2
interface is not expected to affect the magnetic and transport properties of the Co nanoparticle
films. The particles have an average size of 13.7 nm with a narrow size distribution, see Fig S3 (b,
c) and crystallize in the hcp structure, as shown in Fig. S4 [45]. A commercial AFM/MFM (Atto
AFM/MFM Ixs; Attocube Systems) was used to map the topography and magnetic images at 200K. During
the measurement, the MFM was performed in constant height mode (single pass) with PPP-MFMR tip from
NANOSENSORS. The lift height is 250 nm and the scan speed is 5μm/s.
To numerically model the magnetic and Berry-phase hysteresis, we have performed micro-
magnetic simulations using ubermag supported by OOMMF [48, 49]. We have numerically
extracted skyrmion number Q from the spin structure. A densely packed film of 1000 Co
nanoparticles has been considered. The Co particles have sizes of about 13.7 nm and the total size
of the simulated system, shown in Fig. S10, is 240 nm 240 nm 60 nm. We have used a compu-
tational cell size of 1.8 nm, which is well below the exchange length lex [12], coherence radius
5.099 lex of Co (10 nm) [12], and the domain-wall width (14 nm) of Co [12], and the current particle
size. This cell size ensures a reasonable real-space resolution of M(r).
Aside from the numerical cell size, our continuum approach is valid on length scales much
larger than the Co-Co interatomic distance of 0.25 nm. This makes it possible to consider the thin
film as a fiber bundle M(r) with the base space r, allowing us to define quantities such as the
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boundary curvature
. A refined atomistic analysis, not considered here, would yield corrections
due to the discrete nature of the atoms at the particle's surfaces and near contact points, see e.g.
Sect. 4.5 in Ref. 12. In particular, the crystal structure of Co is inversion-symmetric, so there are
no bulk Dzyaloshinskii-Moriya interactions (DMI). Corrections to the magnetization angles
caused by the DMI of surface atoms are likely but probably very small. Note that the Co nano-
particles exhibit nanoscale inversion symmetry, as contrasted, for example, to the magnetism of
Co/Pt bilayers [27].
The cluster-deposition method yields isotropic nanoparticles with random grain orientation
and therefore a random orientation of the easy magnetization axes n of the hcp Co particles,
obeying <nx> = <ny> = <nz> = 0 and <n2> = 1. This randomness in simulations, clearly visible in
Fig. S10(b), was implemented by using python np.random.uniform [45, 49]. The particles touch
each other as shown in Fig S3(d), so that the exchange stiffness A near the contact points is the
same as in bulk Co.
Temperature-dependent micromagnetic effects are included in the lowest order, that is, by
considering the intrinsic materials parameters Ms, K1, and A as temperature-dependent. This
approach accounts for the atomic spin disorder outlined in Fig. 1(a). Other finite-temperature
corrections, caused for example by magnetic viscosity [12], have been ignored. In our simulations,
we have taken values of Ms = 1300 kA/m, K1 = 0.58 MJ/m3, and A = 10.3 pJ/m [12].
III. RESULTS AND DISCUSSION
Transmission electron microscope and the corresponding particle-size histogram show an
average particle size of 13.7 nm with a standard deviation
/d 0.15 (Figs. S3b and S3c) for the
Co nanoparticles. We have conducted magnetic, electron-transport, and Hall-effect measurements
at temperatures from 10 K to 300 K for the dense Co nanoparticle films as schematically shown in
Fig. S 3(d). The magnetic hysteresis loops are shown in Fig. S5, and the measured coercivities are
0.18 T at 10 K and 0.04 T at 300 K.
Figure 2 compares the experimental data on a Co nanoparticle thin film (a) with numerical
predictions (b). The THE was extracted from Hall-effect measurements, Fig. S6, as explained in
Supplement B. We see that the Berry-phase hysteresis loops (colored) look qualitatively different
from the magnetic hysteresis loops (black) and that they are much broader than the magnetic ones.
Figure 2(a-b) also shows that Berry-phase hysteresis loops contain more features than magnetic
hysteresis loops. There are both mathematical and physical explanations for these differences.
Mathematically, Eq. (1) contains derivatives, which amounts to a numerical amplification of
details. Physically, Berry-phase hysteresis loops exhibit a more complicated dependence on the
spin structure, because
is more complicated than m.
摘要:

1TopologicalPhaseTransitionsandBerry-PhaseHysteresisinExchange-CoupledNanomagnetsAhsanUllah,*XinLi,YunlongJin,RabindraPahari,LanpingYue,XiaoshanXu,BalamuruganBalasubramanian,DavidJ.Sellmyer,‡andRalphSkomski‡DepartmentofPhysics&AstronomyandNebraskaCenterforMaterialsandNanoscience,UniversityofNebraska...

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