Towards a New Generation of Monolithic Active Pixel Sensors

2025-05-06 0 0 198.33KB 3 页 10玖币

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Ankur Chauhan, Manuel Del Rio Viera1, Doris Eckstein, Finn Feindt∗

, Ingrid-Maria Gregor1, Karsten Hansen, Lennart Huth,

Larissa Mendes2, Budi Mulyanto, Daniil Rastorguev3, Christian Reckleben, Sara Ruiz Daza1, Paul Sch¨

utze, Adriana Simancas1,

Simon Spannagel, Marcel Stanitzki, Anastasiia Velyka, Gianpiero Vignola1, Håkan Wennl¨

Deutsches Elektronen-Synchrotron DESY, Notkestr. 85, 22607 Hamburg, Germany

Abstract

A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher

densities of on-chip circuits and, for a given pixel size, more sophisticated in-pixel logic compared to larger feature size processes.

MAPS are a cost-eﬀective alternative to hybrid pixel sensors since ﬂip-chip bonding is not required. In addition, they allow for

signiﬁcant reductions of the material budget of detector systems, due to the smaller physical thicknesses of the active sensor and

the absence of a separate readout chip.

The TANGERINE project develops a sensor suitable for future Higgs factories as well as for a beam telescope to be used at

beam-test facilities. The sensors will have small collection electrodes (order of µm) to maximize the signal-to-noise ratio, which

makes it possible to minimize power dissipation in the circuitry. The ﬁrst batch of test chips, featuring full front-end ampliﬁers

with Krummenacher feedback, was produced and tested at the Mainzer Mikrotron (MAMI) at the end of 2021. MAMI provides an

electron beam with currents up to 100 µA and an energy of 855 MeV. The analog output signal of the test chips was recorded with

a high bandwidth oscilloscope and used to study the charge-sensitive ampliﬁer of the chips in terms of waveform analysis. A beam

telescope was used as a reference system to allow for track-based analysis of the recorded data.

Keywords: Silicon, CMOS, monolithic active pixel sensors, MAPS, particle detection, test beam, Allpix2, TCAD

1. Introduction

The Tangerine (Towards Next Generation Silicon Detectors)

project pursues the goal of developing a monolithic active pixel

sensor (MAPS) using a 65 nm CMOS imaging process. The

sensor will be optimized for the requirements of e.g. future lep-

ton colliders, so the project aims for a spatial resolution below

3µm, temporal resolution below 10 ns, and a total thickness be-

low 50 µm.

To optimize the sensor design, the project employs a chain of

simulation tools predicting the performance of a speciﬁc sensor

design in a tracking application. The ﬁrst step is the detailed

calculation of the electric ﬁelds, starting from a generic doping

proﬁle. To do so, the Poisson equations are numerically solved,

using Synopsys Technology Computer Aided Design (TCAD)

software [1]. These electric ﬁelds are used in Allpix2[2] for

charge transport simulations. The energy deposition by charged

particles is simulated via an interface to Geant4 [3].

The simulated performance is compared for diﬀerent sen-

sor designs, emphasizing sensor volume modiﬁcations as intro-

duced in [4, 5] for sensors produced in a 180 nm CMOS imag-

ing process. Also, the pixel pitch, the biasing conditions, the

∗Corresponding author

Email address: finn.feindt@desy.de (Finn Feindt)

1Also at University of Bonn, Germany

2Also at University of Campinas, Brazil

3Also at University of Wuppertal, German

width of the p-well opening and the width of the gap in the n-

blanket are varied. More details on the sensor layout and the

simulation procedure are given in [6].

This paper addresses the characterization of a ﬁrst test

chip featuring Krummenacher type charge sensitive ampliﬁers

(CSA) [7], received in October 2021. The main feature of

the ampliﬁer is a continuous reset, well suited for time over

threshold (TOT) measurements. The CSA test chip features

two CSAs with diﬀerent feedback capacitances (1.5 and 2 fF),

which can be investigated via test-pulse injection. It also hosts

a 2 ×2 pixel matrix with a pitch of 16.3µm. The output signal

of these pixels is ampliﬁed with the same type of CSA (2 fF)

and an additional operational ampliﬁer before they are recorded

with a high-bandwidth oscilloscope (4 GHz, 10 Gs/s per chan-

nel) in edge-trigger mode.

2. Sensor Testing

First tests of the CSA test chip were performed in the labora-

tory using an 55Fe source. They were followed by a campaign

of test-beam measurements at the DESY II Test Beam facil-

ity [8], CERN SPS, and at the Mainzer Mikrotron (MAMI) fa-

cility [9], using a EUDET-type [10], a Timepix-based [11], and

a compact ALPIDE-based [12] beam telescope, respectively.

The acquired waveforms were analyzed in terms of a pulse

shape analysis. For an analysis including track reconstruction,

the Corryvreckan software [13] was used. Data were recorded

Preprint submitted to Proceedings of the 15th Pisa Meeting on Advanced Detectors October 19, 2022

arXiv:2210.09810v1 [physics.ins-det] 18 Oct 2022

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TowardsaNewGenerationofMonolithicActivePixelSensorsAnkurChauhan,ManuelDelRioViera1,DorisEckstein,FinnFeindt,Ingrid-MariaGregor1,KarstenHansen,LennartHuth,LarissaMendes2,BudiMulyanto,DaniilRastorguev3,ChristianReckleben,SaraRuizDaza1,PaulSch¨utze,AdrianaSimancas1,SimonSpannagel,MarcelStanitzki,Anast...

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