
2
FIG. 2. (a) One-band “purely-electronic” spin battery. (b)
Two-band “electron-holes” spin battery. Filled levels are
drawn in gray color. The number of carriers of one spin de-
creases when the number of carriers of another spin increases
for one-band battery, and polarity is not important. We chose
polarity of two-band battery in such a way to have increasing
of both types of carriers during charging process.
usage of two-band conductors which contain not only the
electrons but also “holes” with opposite charge. What is
more, the carriers are polarized in such a way as to spin ±
connected to charge ±. In this situation the charges q±
have the opposite sign: q+=−q−=e. This is possible
when interaction between carriers from different bands
is weak15, or by using electron-hole pairing methods16–18
for the spin-flip suppressing mentioned in11. When the
one-band battery is being charged it follows to increas-
ing the number of certain spin carriers, and it necessarily
leads to decreasing the number of opposite spin carriers in
order to preserve electroneutrality (1). In two-band bat-
tery we always chose polarity of charging voltage in such
a way to have increasing of the number of carriers of both
spins (η+>0). It means that we connect positive-guided
contact to the electrode with “+”-polarity (correspond-
ing to “holes” with charge q+), and negative-guided con-
tact to the electrode with “−”-polarity (corresponding to
electrons with charge q−). Non-equilibrium states caused
by deviations of spin densities in one-band and two-band
SB-s are shown in Fig. 2. Here we show schematically
the filling energy levels εas functions of corresponded
densities of states (DOS) D±for spins ±.
As can be seen, two-band battery has polarity, and
such SB is equal to chemical battery but with the follow-
ing difference. In chemical battery we have the concen-
trations changing, and correspondingly the changing of
chemical potentials with respect to electrodes, while q±
corresponds to the one ion charge: −q+=q−=−zF/Na,
where zis positive valency, Fis Faraday constant, and
Nais Avogadro number (for definiteness we chose the
sign the same as elementary charge has, we assume the
same absolute value of valency of all ions). In the ab-
sence of charging potential difference in the circuit, the
presence of non-equilibrium chemical potentials leads to
appearance of diffusion forces, which pull-in or push-out
charges into the circuit. It happens on electrodes of the
opposite “affinity” (such an affinity is related to chem-
ical reactions in usual chemical battery, or it is related
to the presence of conduction band only for certain spin
on ±electrodes in the SB). Asymmetry of charge mov-
ing during relaxation into thermodynamic equilibrium
state causes electric current in the full circuit11. Also,
we can consider SB with spin/charge carriers are not be-
ing usual conductive electrons but quasi-particles. Such
quasi-particles even can have zero electric charge, but in
this situation the movement of such quasi-particles do
not cause electric current, and thus the energy extrac-
tion from this battery is difficult. SB doesn’t require
chemical reactions, and therefore it does not suffer from
chemical degradation. As we show below, SB doesn’t re-
quire heating in the case it consists of degenerate gas of
charge/spin carriers. Obviously, SB can be a source not
only of charge but also of spin current19–2122. At last, SB
can be charged without electrodes with using polarized
electromagnetic radiation23.
III. GENERAL FORMULAS FOR THE ENERGY
OF CHARGED SB
Let us denote E±(µ±) as the total internal energy of
carriers of ±components for given value of electrochem-
ical potential µ±. The energy stored in the battery is a
difference between the internal energies of charged and
discharged states
δE =E+(µ0+η+)+E−(µ0+η−)−E+(µ0)−E−(µ0).(2)
At microscopic level the value of Ein SB as well in chem-
ical battery is determined by equilibrium energy distri-
bution of carriers n±(ε, µ), DOS D±(ε) and by the vol-
ume Ω:
E±(µ±)=Ω
∞
Z
0
dεεD±(ε)n±(ε, µ±).(3)
Also, we can write the following expression for ρ±in order
to substitute it in (1)
ρ±(µ±) =
∞
Z
0
dεD±(ε)n±(ε, µ±).(4)
As can be seen from (2) and (3), the energy distribution
determines which parts of the DOS dependencies D±(ε)
give the main contribution. Of course, the energy dis-
tribution can be classical (Boltzmann), Bose, Fermi or,
even, so-called fractional statistics.
Note, usually, εD(ε) increases with ε, and on the other
hand Bose distributions collect particles in states with
lower energies where DOS has its minimal values. Of
course, DOS of Bose distributions can have certain sin-
gularities (see24), thus some low dimensional systems re-
quire special investigation. However, in general case, if
we do not consider non-physical DOS which diverge at