High-energy Landau levels in graphene beyond nearest-neighbor hopping processes Corrections to the eective Dirac Hamiltonian Kevin J. U. Vidarte1and Caio Lewenkopf2 3

2025-05-06 0 0 858.6KB 11 页 10玖币
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High-energy Landau levels in graphene beyond nearest-neighbor hopping processes:
Corrections to the effective Dirac Hamiltonian
Kevin J. U. Vidarte1and Caio Lewenkopf2, 3
1Instituto de F´ısica, Universidade Federal do Rio de Janeiro, 21941-972 Rio de Janeiro - RJ, Brazil
2Instituto de F´ısica, Universidade Federal Fluminense, 24210-346 Niter´oi - RJ, Brazil
3Max Planck Institute for the Physics of Complex Systems, 01187 Dresden, Germany
(Dated: October 10, 2022)
We study the Landau level spectrum of bulk graphene monolayers beyond the Dirac Hamiltonian
with linear dispersion. We consider an effective Wannier-like tight-binding model obtained from
ab initio calculations, that includes long-range electronic hopping integral terms. We employ the
Haydock-Heine-Kelly recursive method to numerically compute the Landau level spectrum of bulk
graphene in the quantum Hall regime and demonstrate that this method is both accurate and
computationally much faster than the standard numerical approaches used for this kind of study.
The Landau level energies are also obtained analytically for an effective Hamiltonian that accounts
for up to third nearest neighbor hopping processes. We find an excellent agreement between both
approaches. We also study the effect of disorder on the electronic spectrum. Our analysis helps to
elucidate the discrepancy between theory and experiment for the high-energy Landau levels energies.
I. INTRODUCTION
The pioneering experimental reports [1,2] on the
unique features of the quantum Hall (QH) effect in
graphene systems played a key role to establish the re-
markable massless Dirac electronic properties of this ma-
terial [35]. Subsequent investigations on QH effects in
graphene continued to produce fascinating results, such
as Klein tunneling [6,7], fractional quantum Hall effect
[8,9], Hofstadter butterflies [10,11], to name a few, at-
tracting a lot of attention to the field (see, for instance,
Ref. [12] for a recent review).
In addition to electronic transport properties,
graphene under strong magnetic fields also shows unique
spectral properties under strong magnetic fields. The
graphene Landau levels have been theoretically predicted
[4,13] to follow
N= sgn(N)~ωcp|N|(1)
where Nis the Landau level index, ωc=vFp2eB/~is
the cyclotron frequency, Bis the magnetic field strength,
and vFstand for the electron Fermi velocity for B= 0.
The LLs spectrum have been experimentally mea-
sured by transmission [14,15] and scanning tunneling
spectroscopy [16,17] for both exfoliated and epithaxial
graphene. These studies have verified the BN disper-
sion to a good approximation. A systematic transmis-
sion spectroscopy study [18] focused on the high-energy
LL showed deviations from Npredicted by Eq. (1). The
puzzle is that the disagreement with the experimental
data persists even when one improves the theoretical de-
scription by accounting next-to-nearest neighbor hopping
processes.
In should be stressed that, while the massless Dirac
Hamiltonian has been shown to be very effective in
describing a variety of low energy electronic graphene
properties, the theoretical modeling for higher energies
is not unique. The standard approach uses density
functional theory (DFT) calculations to obtain a tight-
binding model based on Wannier orbitals, that contain
an arbitrary range of hopping terms that fit the nonlinear
features of the dispersion relation [1924].
Another possibility for the discrepancy between the-
ory and experiment is disorder, which is ubiquitous in
graphene [25]. Numerical investigations have studied the
broadening the Landau subbands [26], but there is no
systematic study of the corresponding disorder-induced
peak shifts. We examine this issue with emphasis on the
large |N|limit.
Our analysis uses the Haydock-Heine-Kelly (HHK) re-
cursive method [2729], also called the Haydock method,
an order N[30] real-space computational approach de-
veloped to study local spectral functions. It transforms
an arbitrary sparse Hamiltonian matrix in a tridiagonal
form and evaluates the diagonal Green’s function by a
continued fraction expansion, avoiding the need of solv-
ing the full eigenvalue problem. The HHK method has
been successfully used to compute the LDOS of differ-
ent compounds [31,32] and more recently in the study
of carbon nanotubes [33,34], and disordered graphene
systems [3537].
In addition to its efficiency, another attractive feature
of the HHK method is that, since it relies on the concept
of nearsightedness [38], it does not use periodic boundary
conditions [39]. Hence, it can be applied to study local
spectral properties of disordered systems, quasicrystals
[40,41], and systems with very large primitive unit cells,
such as twisted graphene layers and 2D systems under
realistic magnetic fields B. Surprising the HHK method
has only been employed once in a case where B6= 0,
namely, in the investigation of Hoftstadter butterfly en-
ergy gaps in square lattices [42]. To the best of our knowl-
edge, so far no one has realized that the method is also
fast and very accurate (as we show) for the study of dis-
crete QH spectra.
Regarding our results, we numerically show that the
large-|N|LL spectrum analytical solution of the contin-
arXiv:2210.03636v1 [cond-mat.mes-hall] 7 Oct 2022
2
uum (long wavelength) effective graphene Hamiltonian
is very accurate up to |N| ≤ 25 and B= 25 T. We in-
clude DFT-fitted third nearest hopping matrix elements
into the graphene tight-binding model Hamiltonian and
show that agreement between theory and experiment is
significantly improved.
This paper is organized as follows. In Sec. II, we
present the model Hamiltonian we use to describe the
electronic properties in graphene, namely, a tight-binding
Hamiltonian that accounts for up to third nearest neigh-
bor hopping processes. Next, we discuss disorder effects
and review the SCBA predictions for the shifts in the LL
subband peak energies and widths. Finally, we briefly
present the main steps of the implementation of the HHK
method, discuss its computational cost and benchmark
its accuracy. In Sec. III we present our results. We ex-
pand previous analytical results for Nand show that, de-
spite the approximations involved (discussed in App. A),
the agreement with the numerical values is remarkable.
We further show that the inclusion of third nearest neigh-
bor matrix elements helps to improve the agreement be-
tween theory and experiment and that disorder plays a
minor role. We summarize our conclusions in Sec. IV.
II. THEORY AND METHODS
A. Model Hamiltonian
The tight-binding Hamiltonian that describes the elec-
tronic structure of graphene monolayers reads [3,20]
H=X
i,j tij c
icj+ H.c,(2)
where tij stands for the hopping matrix element between
the Wannier electronic orbitals centered at the carbon
sites iand j. Most studies consider only first nearest
neighbor hopping processes, a simple model that is able
to describe the low energy properties of bulk graphene
[3,25]. Tight-binding parameterizations based on den-
sity functional theory (DFT) [19,21,22,24] show the
necessity to including hopping terms beyond first nearest
neighbors for a more accurate modeling of the electronic
dispersion, particularly when addressing higher energies.
Here, we consider first t(1), second t(2), and third t(3)
nearest neighbor hopping terms. Within this approxima-
tion it is convenient to write the graphene Hamiltonian
in a sublattice matrix representation that in reciprocal
space reads [4,43]
Hkt(2)|γk|2t(1)γ
k+t(3)γ0
k
t(1)γk+t(3)γ0∗
kt(2)|γk|2,(3)
with
γk1 + eik·a2+eik·(a2a1)(4)
and
γ0
k1 + ei2k·a2+ei2k·(a2a1),(5)
where a1=3a0ˆ
exand a2=3a0/2ˆ
ex+3ˆ
eyare
the primitive vectors honeycomb lattice and a0= 1.4
A
is the carbon-carbon bond length [3]. The first and
third nearest neighbor hopping terms, that connect dif-
ferent sublattices [3,4], correspond to the off-diagonal
matrix elements, while the second-nearest hoppings are
related to the diagonal ones. This apparent correspon-
dence between even-odd nearest neighbors and diagonal
off-diagonal matrix elements breaks down for fourth near-
est neighbors and beyond [23]. In Eq. (3) we neglect a
constant diagonal term that shifts the energy spectrum
by 3t(2).
The energy dispersion reads
kλ=t(2)|γk|2+λ|t(1)γk+t(3)γ0∗
k|,(6)
where λlabels the valence (λ=1) and conduction
bands (λ= +1). Note that the second-neighbors hop-
ping contributions do not depend of λand, thus, break
the electron-hole symmetry.
The presence of an external magnetic field Bcan be
accounted by the Peierls substitution [44,45], that is, by
the transformation
tij tij exp "ie
}ZRj
Ri
dr·A(r)#,(7)
where Rnis the lattice vector associated with the site
n,eis the electron charge. Here, we choose the vector
potential A(r) = (0, Bx, 0) that gives a magnetic field
B=∇ × A=Bˆ
ezperpendicular to the graphene layer.
B. Numerical method
We compute the Landau level spectra using the
Haydock-Heine-Kelly (HHK) recursion technique [27
29]. The latter has been developed to calculate the local
properties of electronic systems represented on a basis of
localized (orthogonal) states |ii, like the one used in the
tight-binding Hamiltonian of Eq. (2). The HHK method
provides a very efficient O(N) recursive procedure to
transform a given Hamiltonian matrix into a tridiagonal
one, that is much more amenable for numerical calcula-
tion. As mentioned introduction, the HHK method has
been successfully used to compute the LDOS of contin-
uous spectra of several systems [3137]. Here, we use
it to compute the LDOS of a Hamiltonian with discrete
eigenvalues.
Let us quickly review the main ingredients of the
HHK method before discussing its use in computing the
graphene Landau level spectrum.
The recursion method starts by targeting a given state
|0}=|ji. The method generates a hierarchy of states
|n}based on the three-term recursion relations [2729]
H|n}=an|n}+bn|n1}+bn+1|n+ 1},(8)
3
with the recursive coefficients
an={n|H|n},(9)
bn+1 =k(Han)|n} − bn|n1}k,(10)
and the orthogonal basis element
|n+ 1}=1
bn+1
[(Han)|n} − bn|n1}],(11)
where b0= 0 and | − 1}= 0. Thus, by construction,
the Hamiltonian matrix in the orthogonal basis {|n}}
is tridiagonal. In turn, the basis functions |n}can be
expressed in terms of Wannier-like states |ji,
|n}=
P
X
i=1
Ani|ii.(12)
Here, we assume that the electronic wave functions are a
superposition of Pstates centered at the atomic sites i
and the atomic orbitals are orthogonal to each other, in
line with the tight binding model of Eq. (2).
The diagonal Green’s function for the seed state |0}is
given by continued fraction [2729]
G00() = {0|1
H|0}
=1
a0b2
1
a1b2
2
a2b2
3
...
,
(13)
expressed in terms of the matrix elements of the tridiag-
onal Hamiltonian in the basis |n}. The LDOS at any site
jcan be written as
LDOS(j, ) = 1
πIm Gr
jj () (14)
≡ −1
πlim
η0+[Im Gjj (+)] .
In practice, a finite ηserves as a convenient regularization
parameter. For continuous spectra, setting η2D/M,
where Dis the bandwidth, guarantees a nice smooth ap-
proximation to LDOS(j, ) [27].
For pristine systems, due to translational symmetry,
the LDOS(j, ) at any jis proportional to the (total)
density of states ρ() [46]. In our calculations we fix jat
the center of the honeycomb lattice of size P.
In previous applications [31,32,42] it has been ob-
served that for a sufficiently large M, the recursive coeffi-
cients converge towards their asymptotic values, namely,
aMaand bMb. The asymptotic value of
ais associated with the center of the energy band 0,
namely, 0=a/2 [27,28]. In graphene systems, a/2
corresponds to the Dirac point energy. For the nearest-
neighbor tight-binding Hamiltonian, the center band en-
ergy is 0= 0 and all ancoefficients are zero. In this
case, by inspecting Eq. (13), one immediately finds that
G00() = G00(). This implies that the LDOS(j, )
has electron-hole symmetry for any jand ρ(0) = 0,
a condition that defines the so-called Dirac points [3].
When t(2) 6= 0, the coefficient anare no longer zero,
the Dirac points are energy shifted, and the electron-
hole symmetry broken. These simple properties are in
line with well established literature results [3], as they
should.
Let us now apply the HHK method to graphene sys-
tems. We begin showing results of the LDOS for bulk
graphene in the absence of external magnetic fields.
Throughout this paper we use the tight-binding param-
eters given in Table I.
The optimal number of iterations Mdepends on P, the
size of the system chosen to represent the bulk, as well
as on the desired accuracy. A detailed analysis about the
dependence of the HHK method accuracy on Mfor con-
tinuum spectra can be found in Ref. [28]. For graphene
in the absence of magnetic field, we find that MP
guarantees a good accuracy. At the end of this section
we study the accuracy for the case where B6= 0.
TABLE I. Tight-binding hopping parameter sets in eV.
Parameterization t(1) (eV) t(2) (eV) t(3) (eV)
A [3] -2.7
B [19] -3.0 0.3
C [22] -3.0933 0.19915 -0.16214
Figure 1shows the LDOS of a graphene monolayer ob-
tained from the HHK method for P= 2.5×107carbon
atoms and M= 5000 iterations. We have contrasted the
the latter with ρ() computed by a direct numerical eval-
uation of ρ() = 1
ABZ Pkδ(kλ), where kλis given
by Eq. (6) and the wavevectors kare sampled over the
Brillouin zone of area ABZ. By accounting for the nor-
malization factor that relates LDOS(j, ) with ρ(), we
observe a nice agreement within the numerical precision
imposed by the regularization parameter η. We find that
differences are only appreciable, as expected, at the band
edges as well as at the van Hove singularities.
Let us now consider the case of a pristine graphene
sheet under an external perpendicular magnetic field B.
The electronic spectrum becomes discrete and strongly
degenerate forming a sequence of Landau levels. Fig-
ure 2(a) shows the graphene LDOS for the tight-binding
parameterizations A, B, and C computed with the HHK
method for B= 25 T, P= 2.25 ×106,M= 1500, and
η= 0.1 meV. Due to the finite η, the LL are broadened
and become Lorentzian distributions, whose energy peaks
(obtained by fitting) are associated with the LL energies
N. Here, we chose η |NN1|, guaranteeing that
the |N| ≤ 30 lowest LL peaks are nicely resolved.
摘要:

High-energyLandaulevelsingraphenebeyondnearest-neighborhoppingprocesses:Correctionstothee ectiveDiracHamiltonianKevinJ.U.Vidarte1andCaioLewenkopf2,31InstitutodeFsica,UniversidadeFederaldoRiodeJaneiro,21941-972RiodeJaneiro-RJ,Brazil2InstitutodeFsica,UniversidadeFederalFluminense,24210-346Niteroi...

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