
3
FIG. 2. Sketch of a band dispersion, highlighting the elec-
tronic states that contribute the most to (a) resistivity and
(b) the Seebeck coefficient, as indicated by the color gradients.
The states are selected by the weighting factors (
−df
dE
) and
−E(df
dE ) from the equations B1 for the resistivity and B2 for
the thermoelectric coefficient, respectively, at a given temper-
ature
T
. The states that contribute most to the resistivity
(Seebeck coefficient) are located at the Fermi level (on either
side of the Fermi level). In the case of the Seebeck coefficient,
the contributions of states above the Fermi level are subtracted
from the contributions of states below the Fermi level—-hence
the Seebeck coefficient is a measure of the particle-hole asym-
metry.
beam epitaxy on (110)-orientated NdGaO
3
. The growth
process used distilled ozone, substrate temperatures of
∼
650-690
◦
C, and the NdNiO
3
calibration procedure de-
scribed in Ref. [
24
]. This synthesis was followed by a
reduction process contained in a sealed glass ampoule, op-
timized with a process at
∼
290
◦
C lasting three hours in
order to reach the square-planar Nd
n+1
Ni
n
O
2n+2
phases
(this process is similar to the procedure in Ref. [
6
]). Us-
ing an electron-beam evaporator, contacts consisting of
a 10 nm chromium sticking layer and 150 nm of gold
were deposited in a Hall bar geometry such that the ap-
plied thermal gradient and measured Seebeck voltage were
along the [001]-direction of the substrate.
The substrate material NdGaO
3
has a high thermal
conductivity that increases 30-fold between room tem-
perature and
∼
30 K [
25
], weakening the applied thermal
gradient along the nickelate film. To mitigate this effect,
we polished the NdGaO
3
substrate to reduce its thickness
from 500 microns down to
∼
100 - 150 microns using dia-
mond lapping film. This served to increase the thermal
gradient that generates the Seebeck voltage, which allowed
us to measure the Seebeck effect down to
∼
60 K, below
which the thermal gradient becomes too small and the
experiment cannot be performed reliably. This process
necessarily involves a brief heat exposure during sample
mounting. We minimized the degradation risk to the
sample [
26
] by using low temperature crystal wax and
mounting in an argon glove box; resistivity measurements
taken before and after polishing showed no substantial
changes.
Measurements. We measured the Seebeck coefficient
using an AC technique used previously for cuprates [
20
].
An AC thermal excitation is generated by passing an
electric current at frequency
ω∼
0
.
1 Hz through a 5
kΩ strain gauge used as a heater to generate a thermal
gradient in the sample. While the heat is carried primarily
by the substrate, this also generates a thermal gradient
∆
TAC
along the film. We detect this AC thermal gradient
at frequency 2
ω
, as well as the absolute temperature shift,
using two type E thermocouples. An AC Seebeck voltage,
∆
VAC
, is also generated at a frequency 2
ω
in response
to the thermal gradient. We measure this voltage with
phosphor-bronze wires attached to the same contacts
where the thermocouples measure ∆
TAC
: this eliminates
uncertainties associated with the geometric factor.
The thermocouple and Seebeck voltages were amplified
using EM Electronics A10 preamplifiers and detected us-
ing a MCL1-540 Synktek lock-in amplifier at the thermal
excitation frequency 2
ω
. The Seebeck coefficient is then
given by
S
=
−
∆
VAC/
∆
TAC
. The frequency
ω
was ad-
justed so that the thermoelectric voltage and the thermal
gradient remained in phase.
Band structure calculations. The paramagnetic
electronic structure of the
n
= 5 and
n
= 3 layered nicke-
lates was calculated using density functional theory (DFT)
combined with the projector augmented wave method, as
implemented in the Vienna ab-initio simulation package
[
27
]. We used a pseudopotential that treats the Nd 4
f
elec-
trons as core electrons. The in-plane lattice parameters
were set to match the NdGaO
3
substrate, and we opti-
mized the out-of-plane lattice parameter. See Appendix A
for more details on the band structure calculations.
Boltzmann transport. We fit a tight-binding model
(Tables Iand II) to the DFT band structure calculated
for the nickelates (Fig. 6). We combined the tight-binding
model and Boltzmann transport theory to calculate the
Seebeck coefficient. We applied the same algorithm that
was used successfully in the cuprates [
20
,
28
–
30
] to numer-
ically evaluate the Seebeck coefficient for the nickelates.
III. RESULTS
Seebeck coefficient. Fig. 3b shows the in-plane See-
beck coefficient of both the
n
= 5 and
n
= 3 samples.
Both samples show an
S/T
that is similar in magnitude,
negative, and independent of temperature. We repro-
duced the Seebeck coefficient of the
n
= 5 layer nickelate
on a second sample (Appendix C), and the measured
S/T
of the
n
= 3 sample is similar to what was measured
previously on the 3-layer nickelate La
4
Ni
3
O
8
above its
metal-to-insulator transition at 105 K [31].
The Seebeck coefficients of both nickelate samples are
also comparable in magnitude and sign to that of the
overdoped cuprate Bi2201
p
= 0
.
23 [
21
]. All of these
measurements contrast with the optimally-doped cuprate
Nd-LSCO
p
= 0
.
24 [
20
], whose Seebeck coefficient is
strongly temperature dependent and changes sign near
room temperature (Fig. 3b). Both cuprates have a similar