2
gular behavior of the critical current has been reported
on the cross-whisker HTSCs junctions, with the critical
current being much reduced as compared to the critical
current of the bulk intrinsic junctions [17]. On the other
hand, the angular dependence of the critical current in
cuprate in-plane grain boundary junctions is indeed well
described by the d-wave pairing symmetry because of
the large in-plane coherence length as compared to that
in the out-of-plane junctions [18, 19], which reduces the
detrimental disorder effects. However, the transmission
electron microscopy has shown that the grain-boundary
Josephson junctions (GBJJs) are generally composed of
facets in the range of 10–100 nm and demonstrate a
strong dependence of their properties upon the partic-
ular HTSC, the substrate, the conditions of the film de-
position, and of the presence of defects [20]. Facets could
take place in all three dimensions as a consequence of the
adopted fabrication techniques for bicrystals, biepitaxial
growth, or step edges [21]. The GBJJs have been well
studied, and their electronic properties were found to be
controlled by the misorientation between two grains [22].
Because of that, the facets create additional complexity
and difficulties in controlling the JJs’ properties.
An angular dependence of the critical current of an
out-of-plane Josephson junction resulting in its change
over two orders of magnitude has been demonstrated
in thin BSCCO twisted heterostructures prepared by
the cryogenic stacking technique while preserving the
coherence of the crystalline and oxygen order at the
interface [23]. An additional important evidence of the
significant reduction of the Josephson critical current
when changing the twist angle has been reported in [24].
It was found that the corresponding critical currents are,
on average, lower than the critical current of an intrinsic
Josephson junction for the BSCCO [23], given that the
fabrication did not occur under cryogenic conditions.
The general improvement of the control over the BSCCO
properties in the low-dimensional limit stimulated the
theoretical activities. The emergence of the topological
states in the twisted vdW heterostructures of HTSC
BSCCO layers with the d-wave superconducting order
parameter was suggested [25–30]. The twist angle close
to 45°was found to result in a time-reversal symmetry
(TRS) broken chiral superconducting dx2
−y2±idxy
phase, which was also reported at the intermediate
twist angles and was attributed to the unconventional
sign structure of the d-wave order parameter [26, 31].
Strong support for this theoretical proposal came from
the experimental detection of some new interfacial su-
perconductivity [23], manifesting as a dominant second
harmonic of the Josephson current close to 45°angle.
However, the TRS breaking in the high temperature
superconducting phase can be suppressed by strong
disorder at the interface [31], hence careful studies of
detrimental disorder effects on the interfaces and novel
methods that rely on cheaper and/or innovative process
of fabrication are required.
II. FABRICATION
We fabricate six 0°Josephson junctions and one 43.2°-
twisted Josephson junction based on the optimally doped
BSCCO flakes using a cryogenic dry transfer technique
in a pure argon atmosphere. This technique consists of
cleaving a sequential pair of fresh surfaces of the BSCCO
from the pre-exfoliated single crystal and stacking the
two resulting flakes on top of each other. This procedure
of the junction fabrication is sketched in Fig. 1 and can be
described as follows. First, the BSCCO crystals are me-
chanically exfoliated using a scotch tape on the SiO2/Si
substrates, previously treated with oxygen plasma and
baked overnight to get rid of water molecules. Next, uti-
lizing the optical contrast, we identify the BSCCO flake
with a thickness in the range between 80 and 100 nm and
cool the sample stack down to −90 °C, to preserve the
crystalline structure and the superconducting state of the
interface while building the junction. After that, we cover
the BSCCO flake with an edge of a polydimethylsiloxane
(PDMS) stamp placed on a glass slide mounted on a mi-
cromanipulator and let the assembly thermalize. At the
temperature, being a little bit above the glass transition
of our PDMS (Tg=−120 °C), the stamp becomes very
adhesive. By quickly detaching the stamp from the sub-
strate, we cleave the crystal along a flat plane between
the BiO planes, obtaining two thinner flakes. The flake
standing on the PDMS stamp is aligned and placed back
onto the bottom flake on the substrate within 40 seconds.
The time between cleaving and stacking makes a huge
impact on the junction quality. We find out that both
flakes should be thicker than 30 nm, otherwise they are
not rigid enough to create a flat interface without modu-
lating the surface. Finally, the stack is slowly heated up
to −30 °C and the top flake is released from the bottom
one as the stamp is no longer adhesive. In Figure 1, the
bottom color bar illustrates representative temperatures
(eg. melting temperature TM) of the commonly used
polymers for exfoliation, such as polycarbonate(PC) and
polypropylene carbonate(PPC)[32]. The control over the
adhesion of the PDMS stamp allows us to fabricate the
junctions by taking advantage of a solvent-free and dry
transfer at low temperatures. In this way, the encapsu-
lated sample survives after being exposed to an ambient
condition for at least three hours.
For three out of the seven junctions (two at 0°, and one
twisted at 43.2°), we opt to additionally protect the inter-
face above the BSCCO heterostructures, especially from
water molecules by placing an encapsulating hexagonal
boron nitride (hBN) flake on top of the stacked flakes
immediately afterward. The bottom surface of the lower
flake in the heterostructure is attached closely to the sub-
strate and, therefore, is not exposed to the ambient atmo-
sphere, which is critical for the degradation of BSCCO.
Electrical contacts are then deposited in two steps using
a chemical-free stencil mask technique [3] in an evapo-
ration chamber directly connected to the glovebox clus-
ter. First, gold electrodes are evaporated right on the