
material defects [9]. Even the highest time resolution dynamic TEM cannot resolve acoustic wave mod-
ulated nm-scale material transformations due to the blurring from the strain wave motion [10]. Under-
standing fundamental phenomena in materials undergoing transformations (such as dislocation migration
in plasticity) will require nm-scale spatial resolution. Dark-field X-ray microscopy (DFXM) [11, 12, 13], a
material characterization tool that emerged in the past decade, can potentially help to obtain the neces-
sary spatial resolution [14] for understanding heterogeneous phenomena in materials. DFXM is a full-field
X-ray imaging technique and has been established as a tool for mapping orientation, and strain in deeply
embedded structures [11]. This technique has also been employed for studying in situ dynamic processes
such as dislocation movement as a function of temperature [15] and structural transformations during
phase transitions in ferroelectric materias [16]. However, the pump-probe laser scheme incorporating the
DFXM technique at synchrotron sources has not yet been reported. Here, we demonstrate the feasibility
of combining DFXM with pump-probe experiments at Sector 6 at APS (Advanced Photon Source).
The experiments reported here examine the laser-induced strains near the surface of a Germanium single
crystal in low X-ray energy and non-destructive mode. Germanium is a popular material for high-speed
metal-oxide-semiconductor transistors and silicon-based optoelectronics [17]. It has good optical properties
and provides carrier mobility much higher than that of silicon [17, 18]. The study of time-resolved full-
field X-ray imaging, which can resolve features within the beam size, of strain propagation in Germanium
semiconductor could be important for the high-speed device application purposes. A similar experimental
approach could be used for direct imaging of propagation of short pulse strain waves, due to laser heating,
through the bulk single crystal. These types of studies will inform models of laser-induced electron-phonon
interactions which will ultimately provide comprehensive information and underlying mechanisms about
laser-induced melting processes in semiconductors.
2 Experimental Setup
A schematic of the DFXM geometry for this experiment is shown in Fig.(1). Our experiments were carried
out at Beamline 6-IDC at the Advanced Photon Source [19]. An X-ray beam with an energy of 13.0 keV
selected by a Si (111) double crystal monochromator, with a bandwidth of ∆E/E = 10−3. The beam
was condensed using a Be Compound Refractive Lens (CRL) comprised of eight 2D Be lenslets, with a
radius of curvature R= 50 µm that produces an effective focal length of 1.5m, to generate a focused
beam of size 6 µm ×6µm on the sample. A 5 mm ×5mm ×0.5mm single crystal Germanium sample is
mounted on the high-precision translation and rotation stages such that the (111) Bragg peak is measured
in the reflection geometry in the horizontal scattering plane. Because of the reflection geometry, there
is a lower axial resolution (more blurring along the beam-direction due to the footprint on the sample
(see Fig.(3))) in our measured images. The transverse spatial resolution is given by the focused-beam size
produced by the condenser lens and is roughly equal to one half of the focused-beam size. The single-
crystalline nature of the sample was verified through static X-ray diffraction measurements carried out at
the same beamline during the same experiment, which shows the capability of switching the setup for both
diffraction and imaging experiments. The 10 ns (FWHM) pulsed laser (1064 nm wavelength, Quantel-
ICE450) with maximum repetition rate of 10 Hz was used to induce surface heating of the Ge crystal,
as shown in Fig.(1).The X-ray attenuation length of Germanium is small at 13 keV energy and only the
effect on the surface of the Germanium is visible during measurements as shown in Fig(3). The excited
sample is probed after a fixed time delay with the X-ray pulse. The direction of the diffracted beam in the
horizontal plane is characterized by the scattering angle for a nominal reflection (111). The objective lens,
polymeric CRL (pCRL)1, is aligned so that the optical axis lies along the diffracted beam to produce a
magnified image on the 2D Pi-MAX IV detector. The objective lens has a design focal length of ∼95 mm
at 13 keV with an effective aperture of ∼60 µm. The detector housing is coupled with a scintillator,
which converts X-ray photons to visible light, and the optical setup with Mo= 5×magnification [19]. The
objective lens projected a magnified image of the diffracting sample onto the far-field detector, with an
X-ray magnification of MX−ray = 19.0×. This yields a total magnification of Mt= 95×.
1Layout 1921 00 A0 #18, lot 2018-04 400-6.
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